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The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching

IEEE transactions on power electronics, 2016-06, Vol.31 (6), p.4526-4535

2016

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A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.258-268

2012

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High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs

IEEE transactions on power electronics, 2017-10, Vol.32 (10), p.7967-7979

2017

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Volltext

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

IEEE transactions on power electronics, 2017-10, Vol.32 (10), p.7954-7966

2017

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Power module with large short-term current capability by using phase change material

Journal of engineering (Stevenage, England), 2019-03, Vol.2019 (16), p.3225-3229

2019

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Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Materials science forum, 2014-02, Vol.778-780, p.599-602

2014

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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2278-2286

2014

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Volltext

Distributed Thermal Monitoring of Wind Turbine Power Electronic Modules Using FBG Sensing Technology

IEEE sensors journal, 2020-09, Vol.20 (17), p.9886-9894

2020

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Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2442-2448

2016

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In Situ Contact Pressure Monitoring of Press Pack Power Module Using FBG Sensors

IEEE transactions on instrumentation and measurement, 2022, Vol.71, p.1-11

2022

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Quasi-Distributed Temperature Detection of Press-Pack IGBT Power Module Using FBG Sensing

IEEE journal of emerging and selected topics in power electronics, 2022-10, Vol.10 (5), p.4981-4992

2022

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Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs

Materials science forum, 2019-07, Vol.963, p.749-752

2019

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A Fast Loss and Temperature Simulation Method for Power Converters, Part I: Electrothermal Modeling and Validation

IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.248-257

2012

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The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

IEEE transactions on transportation electrification, 2019-12, Vol.5 (4), p.1349-1359

2019

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Volltext

Evaluation of SiC Schottky Diodes Using Pressure Contacts

IEEE transactions on industrial electronics (1982), 2017-10, Vol.64 (10), p.8213-8223

2017

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Volltext

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

IEEE transactions on power electronics, 2015-12, Vol.30 (12), p.6978-6992

2015

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Volltext

Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

Materials science forum, 2019-07, Vol.963, p.873-877

2019

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Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

IEEE journal of the Electron Devices Society, 2017-07, Vol.5 (4), p.256-261

2017

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Combined N2O and phosphorus passivations for the 4H-SiC/SiO2 interface with oxide grown at 1400°C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Design Optimization of 1.2kV 4H-SiC Trench MOSFET

Materials science forum, 2019-07, Vol.963, p.605-608

2019

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Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

Materials science forum, 2018-06, Vol.924, p.440-443

2018

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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Materials science forum, 2019-07, Vol.963, p.353-356

2019

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Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

Materials science forum, 2019-07, Vol.963, p.539-543

2019

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Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

Materials science forum, 2019-07, Vol.963, p.511-515

2019

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Numerical study of energy capability of Si/SiC LDMOSFETs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching

A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module

High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Power module with large short-term current capability by using phase change material

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Distributed Thermal Monitoring of Wind Turbine Power Electronic Modules Using FBG Sensing Technology

Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation

In Situ Contact Pressure Monitoring of Press Pack Power Module Using FBG Sensors

Quasi-Distributed Temperature Detection of Press-Pack IGBT Power Module Using FBG Sensing

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs

A Fast Loss and Temperature Simulation Method for Power Converters, Part I: Electrothermal Modeling and Validation

The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

Evaluation of SiC Schottky Diodes Using Pressure Contacts

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating

Combined N2O and phosphorus passivations for the 4H-SiC/SiO2 interface with oxide grown at 1400°C

Design Optimization of 1.2kV 4H-SiC Trench MOSFET

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

Numerical study of energy capability of Si/SiC LDMOSFETs

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