IEEE electron device letters, 2012-03, Vol.33 (3), p.360-362
2012
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Tri-Gate Normally-Off GaN Power MISFET
- Ist Teil von
- IEEE electron device letters, 2012-03, Vol.33 (3), p.360-362
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2012
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and V gs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 ± 9 mV/decade. The threshold voltage of the new device is 0.80 ± 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2011.2179971Titel-ID: cdi_pascalfrancis_primary_25564861
- Format
- –
- Schlagworte
- Aluminum gallium nitride, Applied sciences, Electrical engineering. Electrical power engineering, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronics, Exact sciences and technology, Gallium nitride, GaN transistor, HEMTs, Leakage current, Logic gates, MISFETs, normally-off, power electronics, Power electronics, power supplies, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, tri-gate