Details

Autor(en) / Beteiligte

• Kumar, Mamidala Jagadesh
• Sahay, Shubham

Titel

Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel

Ist Teil von

• IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3350-3353

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2016

Link zum Volltext

• Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this brief, we demonstrate for the first time that the presence of a hybrid channel, which consists of a p + layer below the n + active device layer in a junctionless (JL) FET, leads to a drastically reduced BTBT-induced parasitic BJT action. Using calibrated 2-D simulations, we show that the JLFET with a p + layer [which we call hole sink (HS)] has a significantly low OFF-state leakage current due to an increased tunneling barrier width, an enhanced source-to-channel barrier height, and a better provision for collecting the band-to-band tunneling (BTBT) generated holes, which results in a diminished parasitic BJT action in the OFF-state. Further, the proposed HS JLFET shows an extremely high ON-state to OFF-state current (I ON /I OFF ) ratio of ~10 7 for a channel length of 10 nm and a significant (I ON /I OFF ) ratio of ~10 4 even for a channel length of 5 nm.