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Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Micromachines (Basel), 2023-11, Vol.14 (11), p.2045

2023

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High-Efficiency and High-Performance Power Electronics for Power Grids and Electrical Drives

Luna, Massimiliano

2023

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Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3022-3028

2022

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Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design

Journal of electronic materials, 2017-03, Vol.46 (3), p.1576-1586

2017

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Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020, p.1-5

2020

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Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Latvian journal of physics and technical sciences, 2017-10, Vol.54 (5), p.14-25

2017

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Introducing Optical Cascode GaN HEMT

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.796-804

2017

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Design and Characterization of High-Current Optical Darlington Transistor for Pulsed-Power Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.769-778

2017

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Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

IEEE sensors journal, 2015-01, Vol.15 (1), p.123-127

2015

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Volltext

Rugged Electrical Power Switching in Semiconductors: A Systems Approach

Proceedings of the IEEE, 2014-01, Vol.102 (1), p.35-52

2014

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The future of bipolar power transistors

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2535-2543

2001

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Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

Applied surface science, 2010-12, Vol.257 (5), p.1437-1440

2010

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Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Advanced functional materials, 2019-02, Vol.29 (9), p.n/a

2019

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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4010-4020

2020

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A New Conjugated Polymer that Enables the Integration of Photovoltaic and Light‐Emitting Functions in One Device

Advanced materials (Weinheim), 2021-06, Vol.33 (22), p.e2101090-n/a

2021

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Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Advanced materials (Weinheim), 2020-03, Vol.32 (12), p.e1908242-n/a

2020

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Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Journal of physics. D, Applied physics, 2023-03, Vol.56 (9), p.93001

2023

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Vertical β-Ga₂O₃ Power Transistors: A Review

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3925-3937

2020

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(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

IEEE Transactions on Electron Devices, 2024-03, Vol.71 (3), p.1340-1343

2024

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Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices

Materials science & engineering. R, Reports : a review journal, 2022-01, Vol.147, p.100661, Article 100661

2022

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High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer

Advanced materials (Weinheim), 2015-01, Vol.27 (1), p.93-100

2015

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Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Nature photonics, 2022-08, Vol.16 (8), p.588-594

2022

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Materials issues and devices of α- and β-Ga2O3

Journal of applied physics, 2019-10, Vol.126 (16)

2019

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Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3212-3222

2021

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Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

High-Efficiency and High-Performance Power Electronics for Power Grids and Electrical Drives

Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection

Mechanical Deformation of Sintered Porous Ag Die Attach at High Temperature and Its Size Effect for Wide-Bandgap Power Device Design

Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Introducing Optical Cascode GaN HEMT

Design and Characterization of High-Current Optical Darlington Transistor for Pulsed-Power Applications

Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

Rugged Electrical Power Switching in Semiconductors: A Systems Approach

The future of bipolar power transistors

Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

A New Conjugated Polymer that Enables the Integration of Photovoltaic and Light‐Emitting Functions in One Device

Large‐Scale Ultrathin 2D Wide‐Bandgap BiOBr Nanoflakes for Gate‐Controlled Deep‐Ultraviolet Phototransistors

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Vertical β-Ga₂O₃ Power Transistors: A Review

(Ultra)Wide-Bandgap Vertical Power FinFETs

Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices

High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer

Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Materials issues and devices of α- and β-Ga2O3

Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II

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