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Circulation of fibrous microplastic (microfiber) in sewage and sewage sludge treatment processes

The Science of the total environment, 2021-11, Vol.795, p.148873-148873, Article 148873

2021

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Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers

Materials, 2020-10, Vol.13 (21), p.4818

2020

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Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor

IEEE transactions on nuclear science, 2023-06, Vol.70 (6), p.1-1

2023

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Study of spiral growth on 4H-silicon carbide on-axis substrates

Journal of crystal growth, 2017-10, Vol.475, p.251-255

2017

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SiC p+n Junction Diodes Toward Beam Monitor Applications

IEEE transactions on nuclear science, 2021-12, Vol.68 (12), p.2787-2793

2021

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Influence of CMP damage induced during flattening SiC epitaxial layer on device performances

Materials science in semiconductor processing, 2020-09, Vol.116, p.105162, Article 105162

2020

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Size Distribution of Atmospheric Particles: 40-Year Trends and 20-Year Comparisons of Chemical Constituents between Residential and Roadside Areas in Osaka City, Japan

Asian Journal of Atmospheric Environment, 2020, 14(4), , pp.345-366

2020

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Microplastics contamination in tidelands of the Osaka Bay area in western Japan

Water and environment journal : WEJ, 2020-08, Vol.34 (3), p.474-488

2020

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Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBD10

2019

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Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Applied surface science, 2010, Vol.256 (6), p.1803-1806

2010

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Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

Materials science forum, , Vol.778-780, p.214-217

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Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

Journal of crystal growth, 2013-10, Vol.381, p.139-143

2013

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Influence of Epi-Layer Growth Pits on SiC Device Characteristics

Materials science forum, 2015-06, Vol.821-823, p.177-180

2015

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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Materials, 2014-10, Vol.7 (10), p.7010-7021

2014

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Annealing effect on photoluminescence of Tb-doped AlBON films

Solid state communications, 2010-08, Vol.150 (29), p.1396-1399

2010

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Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.169-172

2015

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Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure

Applied surface science, 2011-08, Vol.257 (20), p.8307-8310

2011

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Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

Applied surface science, 2010-12, Vol.257 (5), p.1437-1440

2010

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The Effects of Ba-Additive on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.040203-040203-3

2012

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Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DH01-04DH01-4

2011

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Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method

Japanese Journal of Applied Physics, 2012-03, Vol.51 (3), p.035501-035501-4

2012

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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Materials science forum, 2020-07, Vol.1004, p.369-375

2020

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The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

Materials science forum, 2013-01, Vol.740-742, p.193-196

2013

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Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

Journal of crystal growth, 2014-09, Vol.401, p.673-676

2014

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Circulation of fibrous microplastic (microfiber) in sewage and sewage sludge treatment processes

Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers

Hybrid SiC Pixel Detector for Charged-Particle Beam Monitor

Study of spiral growth on 4H-silicon carbide on-axis substrates

SiC p+n Junction Diodes Toward Beam Monitor Applications

Influence of CMP damage induced during flattening SiC epitaxial layer on device performances

Size Distribution of Atmospheric Particles: 40-Year Trends and 20-Year Comparisons of Chemical Constituents between Residential and Roadside Areas in Osaka City, Japan

Microplastics contamination in tidelands of the Osaka Bay area in western Japan

Reducing warpage of thick 4H-SiC epitaxial layers by grinding the back of the substrate

Characterization of Si-added aluminum oxide (AlSiO) films for power devices

Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H2-SiH4-C3H8 CVD System

Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

Annealing effect on photoluminescence of Tb-doped AlBON films

Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

Influence of inserting AlN between AlSiON and 4H–SiC interface for the MIS structure

Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

The Effects of Ba-Additive on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

Luminescence Characteristics and Annealing Effect of Tb-Doped AlBNO Films for Inorganic Electroluminescence Devices

The Effects of Substrate Surface Treatments on Growth of $a$-Plane GaN Single Crystals Using Na Flux Method

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

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