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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

IEEE photonics technology letters, 2011-09, Vol.23 (17), p.1189-1191

2011

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Volltext

MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Advanced electronic materials, 2019-08, Vol.5 (8), p.n/a

2019

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Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2270-2275

2020

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Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4021-4026

2020

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A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1255-1262

2012

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Volltext

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines (Basel), 2021-04, Vol.12 (5), p.488

2021

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High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2842-2845

2012

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Volltext

Comparison of ZnO-Based JFET, MESFET, and MISFET

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1828-1833

2013

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Volltext

Scaling SOI MESFETs to 150-nm CMOS Technologies

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1628-1634

2011

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Volltext

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1096-1101

2011

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Volltext

The evolution of transistors for power amplifiers: 1947 to today

2015 IEEE MTT-S International Microwave Symposium, 2015, p.1-4

Niehenke, Edward C.

2015

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Volltext

A comprehensive model of frequency dispersion in 4H–SiC MESFET

Solid-state electronics, 2009-03, Vol.53 (3), p.285-291

2009

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System control and management for low-cost high-volume GaAs manufacturing

IEEE transactions on semiconductor manufacturing, 2003-08, Vol.16 (3), p.390-398

2003

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Volltext

Analysis of buried gate MESFET under dark and illumination

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.2138-2142

2001

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Volltext

Heat-spreading diamond films for GaN-based high-power transistor devices

Diamond and related materials, 2001-03, Vol.10 (3), p.744-749

2001

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Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance

Journal of electronic materials, 2005-04, Vol.34 (4), p.330-335

2005

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Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2032-2038

2003

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Volltext

Physics and applications of the Schottky junction transistor

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2421-2427

Thornton, T.J.

2001

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Volltext

Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Journal of electronic materials, 2004-08, Vol.33 (8), p.908-911

2004

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Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Diamond and related materials, 2001-03, Vol.10 (3), p.1283-1286

2001

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Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface

Japanese Journal of Applied Physics, 1999-05, Vol.38 (Part 1, No. 5A), p.2704-2706

1999

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Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates

Japanese Journal of Applied Physics, 1998, Vol.37 (Part 1, No. 6A), p.3205-3209

1998

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Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5B), p.3109-3114

1997

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Symptoms of stress-induced gain degradation in power MESFETs

Journal of electronic materials, 1998-07, Vol.27 (7), p.826-828

1998

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs

A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

Comparison of ZnO-Based JFET, MESFET, and MISFET

Scaling SOI MESFETs to 150-nm CMOS Technologies

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

The evolution of transistors for power amplifiers: 1947 to today

A comprehensive model of frequency dispersion in 4H–SiC MESFET

System control and management for low-cost high-volume GaAs manufacturing

Analysis of buried gate MESFET under dark and illumination

Heat-spreading diamond films for GaN-based high-power transistor devices

Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance

Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET

Physics and applications of the Schottky junction transistor

Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface

Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates

Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Symptoms of stress-induced gain degradation in power MESFETs

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