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A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.978-987
2016
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Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT
IEEE transactions on electron devices, 2023-10, Vol.71 (3), p.1-9
2023
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Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5593-5599
2020
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Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2550
2024
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Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
IEEE transactions on industrial electronics (1982), 2021-09, Vol.68 (9), p.8798-8807
2021
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1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capability by Adding Plasma Spreading Layer
IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4730-4736
2023
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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs
IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348
2022
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Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs
IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.184-191
2021
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Review and analysis of SiC MOSFETs’ ruggedness and reliability
IET power electronics, 2020-02, Vol.13 (3), p.445-455
2020
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Short-Circuit Failure Model of SiC MOSFET Including the Interface Trapped Charges
IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.90-98
2020
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Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2771-2780
2019
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A Critical Fault-Tolerant Inverter Based on Internal Evolutionary Short-Circuit Failure Mechanism of IGBT Module
IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-12, Vol.12 (12), p.1914-1921
2022
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Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs
IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4027-4032
2020
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Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs
IEEE journal of emerging and selected topics in power electronics, 2022-08, Vol.10 (4), p.4665-4679
2022
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