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Modification of the critical v/G of the Voronkov's theory on the grown-in defects in Si crystals

Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.98001

2020

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Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.75504

2022

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Vacancy- and interstitial-mediated self-diffusion coefficients determined from the analysis of observed self-diffusion coefficients in silicon crystals

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.45505

2020

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Temperature Dependence of the Optical Absorption Peaks at around 1990 cm - 1 in Electron-irradiated Si doped with Hydrogen

Japanese Journal of Applied Physics, 1999-06, Vol.38 (Part 1, No. 6A), p.3632-3633

Suezawa, Masashi

1999

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The Formation of H2 by Electron-Irradiation of Hydrogenated Si

Japanese Journal of Applied Physics, 1999-07, Vol.38 (Part 2, No. 7A), p.L758-L760

Suezawa, Masashi

1999

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Hydrogen-related complexes formed by electron-irradiation of hydrogenated silicon

Physical review. B, Condensed matter, 2001-12, Vol.63 (3), Article 035203

Suezawa, Masashi

2001

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Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It

Japanese Journal of Applied Physics, 1998-07, Vol.37 (Part 2, No. 7A), p.L806-L808

Suezawa, Masashi

1998

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Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen

Japanese Journal of Applied Physics, 2003-11, Vol.42 (Part 1, No. 11), p.6737-6741

2003

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Single vacancies in slowly cooled silicon crystals

Physica. B, Condensed matter, 2007-12, Vol.401, p.123-125

2007

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Thermal properties of H-related complexes in electron-irradiated Si doped with H

Journal of applied physics, 1999-11, Vol.86 (9), p.4865-4870

Suezawa, Masashi

1999

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Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si

Japanese Journal of Applied Physics, 1995-05, Vol.34 (5A), p.2197-2206

1995

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Comment on “Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions”

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11), Article 117201

2014

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An iron–phosphorus pair in silicon

Journal of physics. Condensed matter, 2004-03, Vol.16 (8), p.L79-L84

2004

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Single vacancies in slowly cooled silicon crystals

Physica. B, Condensed matter, 2007, Vol.401-02, p.123-125

2007

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Thermal properties of H-related complexes in electron-irradiated Si doped with H

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.224-227

Suezawa, Masashi

1999

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Formation and annihilation of H-point defect complexes in quenched Si doped with C

Journal of applied physics, 2000-10, Vol.88 (8), p.4525-4530

2000

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Positron annihilations associated with defects in plastically deformed Si

Japanese Journal of Applied Physics, 1995-09, Vol.34 (9A), p.4579-4586

1995

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Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials

Journal of applied physics, 1999-08, Vol.86 (4), p.1848-1853

1999

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Stress-induced-dichroism of the 648.2- and 1819.5-cm−1 infrared absorption lines of oxygen in silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.592-595

2003

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Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere

Materials science forum, 1997-01, Vol.258-263, p.229-234

Suezawa, Masashi

1997

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Formation Energy of Interstitial Si in Au-Doped Si

MRS proceedings, 1998-01, Vol.510, Article 15

Suezawa, Masashi

1998

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Defects with deep levels in GaAs induced by plastic deformation and electron irradiation

Japanese Journal of Applied Physics, 1988-10, Vol.27 (10), p.1929-1936

1988

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Optical absorption due to H-point defect complexes in quenched Si doped with C

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.247-250

1999

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ESR study of Fe–H complexes in Si

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.445-448

1999

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Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 1, No. 6A), p.3629-3636

2002

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Modification of the critical v/G of the Voronkov's theory on the grown-in defects in Si crystals

Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals

Vacancy- and interstitial-mediated self-diffusion coefficients determined from the analysis of observed self-diffusion coefficients in silicon crystals

Temperature Dependence of the Optical Absorption Peaks at around 1990 cm - 1 in Electron-irradiated Si doped with Hydrogen

The Formation of H2 by Electron-Irradiation of Hydrogenated Si

Hydrogen-related complexes formed by electron-irradiation of hydrogenated silicon

Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It

Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen

Single vacancies in slowly cooled silicon crystals

Thermal properties of H-related complexes in electron-irradiated Si doped with H

Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si

Comment on “Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions”

An iron–phosphorus pair in silicon

Single vacancies in slowly cooled silicon crystals

Thermal properties of H-related complexes in electron-irradiated Si doped with H

Formation and annihilation of H-point defect complexes in quenched Si doped with C

Positron annihilations associated with defects in plastically deformed Si

Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials

Stress-induced-dichroism of the 648.2- and 1819.5-cm−1 infrared absorption lines of oxygen in silicon

Optical Absorption Due to Hydrogen Bound to Interstitial Si in Si Crystal Grown in Hydrogen Atmosphere

Formation Energy of Interstitial Si in Au-Doped Si

Defects with deep levels in GaAs induced by plastic deformation and electron irradiation

Optical absorption due to H-point defect complexes in quenched Si doped with C

ESR study of Fe–H complexes in Si

Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen

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