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On the nature of thermal equilibrium point defects in Si: Are the thermal equilibrium point defects in Si crystals Frenkel pairs or Schottky defects?

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4), p.48005-048005

2017

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On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Journal of applied physics, 2010-07, Vol.108 (1), p.016105-016105-3

2010

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Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion

Japanese Journal of Applied Physics, 2014-09, Vol.53 (9), p.91302-1-091302-7

2014

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Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method

Journal of applied physics, 2011-10, Vol.110 (8), p.083531-083531-5

2011

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Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon

Physical review. B, Condensed matter, 2001-12, Vol.63 (3), Article 035201

Suezawa, Masashi

2001

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Modification of the critical v/G of the Voronkov's theory on the grown-in defects in Si crystals

Japanese Journal of Applied Physics, 2020-09, Vol.59 (9), p.98001

2020

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Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Journal of crystal growth, 2010-09, Vol.312 (19), p.2783-2787

2010

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Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.75504

2022

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Vacancy- and interstitial-mediated self-diffusion coefficients determined from the analysis of observed self-diffusion coefficients in silicon crystals

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4), p.45505

2020

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On the Extended Point Defect Model in Si Crystals at High Temperature

Japanese Journal of Applied Physics, 2008-09, Vol.47 (9R), p.7117

2008

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Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere

Journal of applied physics, 2000-06, Vol.87 (12), p.8361-8367

2000

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Vacancy Formation Energy of Silicon Determined by a New Quenching Method

Japanese Journal of Applied Physics, 2001-08, Vol.40 (8B), p.L854

2001

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Optical absorption study of Si grown in a hydrogen ambient

Journal of applied physics, 1998-02, Vol.83 (4), p.1958-1961

Suezawa, Masashi

1998

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Properties of an Iron–Vacancy Pair in Silicon

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 12), p.7288-7292

2002

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Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si

Japanese Journal of Applied Physics, 1999-06, Vol.38 (Part 2, No. 6A/B), p.L608-L610

Suezawa, Masashi

1999

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Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon

Applied physics letters, 2000-07, Vol.77 (3), p.376-378

2000

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H2-related Defects in Si Quenched in H2 Gas Studied by Optical Absorption Measurements

Japanese Journal of Applied Physics, 1999-05, Vol.38 (Part 2, No. 5A), p.L484-L486, Article L484

Suezawa, Masashi

1999

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Temperature Dependence of the Optical Absorption Peaks at around 1990 cm - 1 in Electron-irradiated Si doped with Hydrogen

Japanese Journal of Applied Physics, 1999-06, Vol.38 (Part 1, No. 6A), p.3632-3633

Suezawa, Masashi

1999

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Vacancy Formation Energy at Metal-Silicon Interface Region

Japanese Journal of Applied Physics, 2005-01, Vol.44 (4L), p.L593

2005

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The Formation of H2 by Electron-Irradiation of Hydrogenated Si

Japanese Journal of Applied Physics, 1999-07, Vol.38 (Part 2, No. 7A), p.L758-L760

Suezawa, Masashi

1999

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Formation Energy of Interstitial Si in Au-Doped Si Determined by Optical Absorption Measurements of H Bound to Interstitial Si

Japanese Journal of Applied Physics, 1998-03, Vol.37 (Part 2, No. 3A), p.L259-L261

Suezawa, Masashi

1998

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ESR Spectra from Platinum-Hydrogen Pair in Silicon

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 2, No. 6A), p.L609-L611

2002

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Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs

Japanese Journal of Applied Physics, 2005-01, Vol.44 (2L), p.L275

2005

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Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method

Japanese Journal of Applied Physics, 2002-10, Vol.41 (10A), p.L1034

2002

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Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation

Japanese Journal of Applied Physics, 2006-12, Vol.45 (12R), p.9162

2006

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On the nature of thermal equilibrium point defects in Si: Are the thermal equilibrium point defects in Si crystals Frenkel pairs or Schottky defects?

On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion

Vacancy formation energy in Czochralski-grown Si crystals determined by a quenching method

Formation of defect complexes by electron-irradiation of hydrogenated crystalline silicon

Modification of the critical v/G of the Voronkov's theory on the grown-in defects in Si crystals

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals

Vacancy- and interstitial-mediated self-diffusion coefficients determined from the analysis of observed self-diffusion coefficients in silicon crystals

On the Extended Point Defect Model in Si Crystals at High Temperature

Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere

Vacancy Formation Energy of Silicon Determined by a New Quenching Method

Optical absorption study of Si grown in a hydrogen ambient

Properties of an Iron–Vacancy Pair in Silicon

Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si

Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon

H2-related Defects in Si Quenched in H2 Gas Studied by Optical Absorption Measurements

Temperature Dependence of the Optical Absorption Peaks at around 1990 cm - 1 in Electron-irradiated Si doped with Hydrogen

Vacancy Formation Energy at Metal-Silicon Interface Region

The Formation of H2 by Electron-Irradiation of Hydrogenated Si

Formation Energy of Interstitial Si in Au-Doped Si Determined by Optical Absorption Measurements of H Bound to Interstitial Si

ESR Spectra from Platinum-Hydrogen Pair in Silicon

Fast Boron Diffusion in Si Crystal under Electron Irradiation at Room Temperature Indicated by the Enhanced Formation of Boron-Hydrogen Pairs

Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method

Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation

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