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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Advanced functional materials, 2019-11, Vol.29 (48), p.n/a

2019

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Laser-based sensing in the long-wavelength mid-infrared: chemical kinetics and environmental monitoring applications

Applied optics (2004), 2023-02, Vol.62 (6), p.A46-A58

2023

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Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Molecular properties of liquid crystals in the terahertz frequency range

Optics express, 2010-03, Vol.18 (6), p.6097

2010

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Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

ACS photonics, 2018-08, Vol.5 (8), p.3305-3314

2018

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High Reflectivity YDH/SiO2 Distributed Bragg Reflector for UV-C Wavelength Regime

IEEE photonics journal, 2018-04, Vol.10 (2), p.1-8

2018

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A mid-infrared diagnostic for benzene using a tunable difference-frequency-generation laser

Proceedings of the Combustion Institute, 2021, Vol.38 (1), p.1787-1796

2021

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Selective BTEX detection using laser absorption spectroscopy in the CH bending mode region

Experimental thermal and fluid science, 2024-02, Vol.151, p.111090, Article 111090

2024

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A mid-IR laser diagnostic for HCN detection

Proceedings of the Combustion Institute, 2023, Vol.39 (1), p.1485-1493

2023

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High-resolution molecular fingerprinting in the 11.6-15 µm range by a quasi-CW difference-frequency-generation laser source

Optics express, 2023-01, Vol.31 (3), p.4164-4178

2023

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THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

Applied surface science, 2020-08, Vol.522 (C), p.146422, Article 146422

2020

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Molecular properties of liquid crystals in the terahertz frequency range

Optics express, 2010-03, Vol.18 (6), p.6097-6107

2010

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Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

ACS photonics, 2018-03, Vol.5 (3), p.964-970

2018

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Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Nanoscale, 2018-09, Vol.10 (34), p.15980-15988

2018

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Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Materials science & engineering. B, Solid-state materials for advanced technology, 2021-01, Vol.263, p.114866, Article 114866

2021

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Self-mode-locked quantum-dot vertical-external-cavity surface-emitting laser

Optics letters, 2014-08, Vol.39 (15), p.4623-4626

2014

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Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy

Nano energy, 2018-12, Vol.54, p.264-271

2018

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Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emittersElectronic supplementary information (ESI) available: Details of the SEM images of the AlGaN nanowires grown with different TMg values, RT PL and Raman spectra of the AlGaN nanowires grown with different TMg values, OCP measurements for all the samples, Mott-Schottky analysis of p-type Si, Mott-Schottky fitting data with the equations solved using cylindrical coordinates, FIB sample preparation, STEM images

2018-08

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THz Properties of Nematic Liquid Crystals

Journal of infrared, millimeter and terahertz waves, 2010-11, Vol.31 (11), p.1312-1320

2010

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High-Power Operation of Quantum-Dot Semiconductor Disk Laser at 1180 nm

IEEE photonics technology letters, 2015-05, Vol.27 (10), p.1128-1131

2015

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Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers

Optics express, 2013-12, Vol.21 (26), p.31940

2013

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Analysis of optical scattering losses in vertical-external-cavity surface-emitting lasers

Applied physics. B, Lasers and optics, 2015-07, Vol.120 (1), p.41-46

2015

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Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Optical materials express, 2017-10, Vol.7 (10), p.3697

2017

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High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

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Anomalous photoluminescence thermal quenching of sandwiched single layer MoS^sub 2

Optical materials express, 2017-10, Vol.7 (10), p.3697

2017

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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Laser-based sensing in the long-wavelength mid-infrared: chemical kinetics and environmental monitoring applications

Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Molecular properties of liquid crystals in the terahertz frequency range

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

High Reflectivity YDH/SiO2 Distributed Bragg Reflector for UV-C Wavelength Regime

A mid-infrared diagnostic for benzene using a tunable difference-frequency-generation laser

Selective BTEX detection using laser absorption spectroscopy in the CH bending mode region

A mid-IR laser diagnostic for HCN detection

High-resolution molecular fingerprinting in the 11.6-15 µm range by a quasi-CW difference-frequency-generation laser source

THz behavior originates from different arrangements of coalescent GaN nanorods grown on Si (111) and Si (100) substrates

Molecular properties of liquid crystals in the terahertz frequency range

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Self-mode-locked quantum-dot vertical-external-cavity surface-emitting laser

Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy

THz Properties of Nematic Liquid Crystals

High-Power Operation of Quantum-Dot Semiconductor Disk Laser at 1180 nm

Evolution of multi-mode operation in vertical-external-cavity surface-emitting lasers

Analysis of optical scattering losses in vertical-external-cavity surface-emitting lasers

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS^sub 2

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