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A close examination of the structure and dynamics of HC(NH2)2PbI3 by MD simulations and group theory

Physical chemistry chemical physics : PCCP, 2016-10, Vol.18 (39), p.27109-27118

2016

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Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Journal of applied physics, 2015-01, Vol.117 (1)

2015

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Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Structural and optical characterization of Eu-implanted GaN

Journal of physics. D, Applied physics, 2009-08, Vol.42 (16), p.165103-165103 (11)

2009

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Neocellularization and neovascularization of nanosized bioactive glass-coated decellularized trabecular bone scaffolds

Journal of biomedical materials research. Part A, 2013-03, Vol.101A (3), p.827-841

2013

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Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Applied physics letters, 2010-09, Vol.97 (11), p.111911-111911-3

2010

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The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

AIP advances, 2016-03, Vol.6 (3), p.035019-035019-10

2016

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Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector

Applied physics letters, 2020-03, Vol.116 (11)

2020

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GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Applied physics letters, 2018-08, Vol.113 (8)

2018

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High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Applied physics letters, 2014-07, Vol.105 (4)

2014

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Sequential multiple-step europium ion implantation and annealing of GaN

Physica status solidi. C, 2014-02, Vol.11 (2), p.253-257

2014

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High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Scientific reports, 2016-07, Vol.6 (1), p.29747-29747, Article 29747

2016

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Growth modification via indium surfactant for InGaN/GaN green LED

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35025

2023

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Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

Journal of applied physics, 2015-02, Vol.117 (7)

2015

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Nature of low dimensional structural modulations and relative phase stability in RexMo(W)1-xS2 transition metal dichalcogenide alloys

Journal of applied physics, 2017-03, Vol.121 (10)

2017

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The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

Journal of crystal growth, 2008-08, Vol.310 (18), p.4069-4072

2008

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Europium doping of zincblende GaN by ion implantation

Journal of applied physics, 2009-06, Vol.105 (11), p.113507-113507-5

2009

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A close examination of the structure and dynamics of HC(NH 2 ) 2 PbI 3 by MD simulations and group theory

Physical chemistry chemical physics : PCCP, 2016-10, Vol.18 (39), p.27109-27118

2016

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Rare earth doping of III-nitride alloys by ion implantation

Physica status solidi. A, Applications and materials science, 2008-01, Vol.205 (1), p.34-37

2008

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The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

Optical materials, 2011-05, Vol.33 (7), p.1063-1065

2011

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Scalable integration of periodically aligned 2D-MoS2 nanoribbon array

APL materials, 2018-07, Vol.6 (7), p.076102-076102-9

2018

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Invitro evaluation of new treatment for dentin hypersensitivity using BioMin F and BioMin C

Journal of non-crystalline solids, 2023-02, Vol.602, p.122072, Article 122072

2023

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A close examination of the structure and dynamics of HC(NH2)2PbI3 by MD simulations and group theoryElectronic supplementary information (ESI) available. See DOI: 10.1039/c6cp02917e

2016-10

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Luminescence spectroscopy of Eu-implanted zincblende GaN

Physica Status Solidi (b), 2008-01, Vol.245 (1), p.170-173

2008

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Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique

Materials science in semiconductor processing, 2018-12, Vol.88, p.40-44

2018

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A close examination of the structure and dynamics of HC(NH2)2PbI3 by MD simulations and group theory

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Structural and optical characterization of Eu-implanted GaN

Neocellularization and neovascularization of nanosized bioactive glass-coated decellularized trabecular bone scaffolds

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Sequential multiple-step europium ion implantation and annealing of GaN

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Growth modification via indium surfactant for InGaN/GaN green LED

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

Nature of low dimensional structural modulations and relative phase stability in RexMo(W)1-xS2 transition metal dichalcogenide alloys

The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

Europium doping of zincblende GaN by ion implantation

A close examination of the structure and dynamics of HC(NH 2 ) 2 PbI 3 by MD simulations and group theory

Rare earth doping of III-nitride alloys by ion implantation

The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

Scalable integration of periodically aligned 2D-MoS2 nanoribbon array

Invitro evaluation of new treatment for dentin hypersensitivity using BioMin F and BioMin C

A close examination of the structure and dynamics of HC(NH2)2PbI3 by MD simulations and group theoryElectronic supplementary information (ESI) available. See DOI: 10.1039/c6cp02917e

Luminescence spectroscopy of Eu-implanted zincblende GaN

Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique

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