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Radiation induced soft errors in 16 nm floating gate SLC NAND flash memory
Microelectronics and reliability, 2020-05, Vol.108, p.113631, Article 113631
2020
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Reducing Soft Error Rate of SoCs Analog-to-Digital Interfaces With Design Diversity Redundancy
IEEE transactions on nuclear science, 2020-03, Vol.67 (3), p.518-524
2020
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Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories
IEEE access, 2022, Vol.10, p.114566-114585
2022
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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2010-2015
2016
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High-Voltage CMOS ESD and the Safe Operating Area
IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1753-1760
2009
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Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs
Journal of electronic testing, 2021-06, Vol.37 (3), p.329-343
2021
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Analysis of Hamming EDAC SRAMs Using Simplified Birthday Statistics
IEEE transactions on nuclear science, 2015-08, Vol.62 (4), p.1771-1778
2015
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Total ionizing dose response of 128 analog states in computational charge-trap memory
IEEE transactions on nuclear science, 2023, p.1-1
2023
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Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD
IEEE transactions on nuclear science, 2020-10, Vol.67 (10), p.2188-2195
2020
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SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1858-1865
2018
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Experimental and Analytical Study of the Responses of Nanoscale Devices to Neutrons Impinging at Various Incident Angles
IEEE transactions on nuclear science, 2020-11, Vol.67 (11), p.2345-2352
2020
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Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs Against Proton Radiation
IEEE transactions on nuclear science, 2022-02, Vol.69 (2), p.126-133
2022
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Investigation of multi-bit upsets in a 150 nm technology SRAM device
IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2433-2437
2005
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Single-Event Effects Induced by Heavy Ions in SONOS Charge Trapping Memory Arrays
IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.406-413
2022
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Neutron-induced effects on a self-refresh DRAM
Microelectronics and reliability, 2022-01, Vol.128, p.114406, Article 114406
2022
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Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2188-2195
2017
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Multiple Cell Upset Classification in Commercial SRAMs
IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1747-1754
2014
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1708-1714
2018
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NBTI product level reliability for a low-power SRAM technology
Microelectronics and reliability, 2007-06, Vol.47 (6), p.873-879
2007
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Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators
IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.762-769
2021
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NBTI product level reliability for a low-power SRAM technology : Modelling the negative bias temperature instability
Microelectronics and reliability, 2007, Vol.47 (6), p.873-879
2007
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Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs
IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2620-2626
2015
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Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate
IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.345-352
2020
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Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage
IEEE transactions on nuclear science, 2017, p.1-1
2017
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Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs
IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2152-2160
2017
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