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Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles

ACS applied materials & interfaces, 2020-08, Vol.12 (32), p.36362-36369

2020

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Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride

Nano letters, 2018-08, Vol.18 (8), p.4710-4715

2018

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IGZO charge trap flash device for reconfigurable logic functions

Applied physics letters, 2024-03, Vol.124 (12)

2024

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Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

ACS nano, 2020-12, Vol.14 (12), p.16266-16300

2020

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Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Nature communications, 2024-03, Vol.15 (1), p.2138-2138

2024

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

Nano letters, 2019-10, Vol.19 (10), p.7534-7539

2019

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Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

Nano letters, 2023-10, Vol.23 (20), p.9626-9633

2023

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A study on pattern classifications with MoS2-based CTF synaptic device

Journal of alloys and compounds, 2024-04, Vol.982, p.173699, Article 173699

2024

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe 2 Monolayers

Nano letters, 2019-10, Vol.19 (10), p.7534-7539

2019

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Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

ACS applied materials & interfaces, 2022-10, Vol.14 (39), p.44550-44560

2022

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Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices (Adv. Funct. Mater. 10/2024)

Advanced functional materials, 2024-03, Vol.34 (10), p.n/a

2024

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Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (20), p.e2106368-n/a

2022

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Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices

Advanced functional materials, 2024-03, Vol.34 (10), p.n/a

2024

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Layer-Controlled Growth of Single-Crystalline 2D Bi 2 O 2 Se Film Driven by Interfacial Reconstruction

ACS nano, 2024-01, Vol.18 (1), p.819-828

2024

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Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction

ACS nano, 2024-01, Vol.18 (1), p.819-828

2024

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Surface-Dominated HfO 2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

ACS applied materials & interfaces, 2022-10, Vol.14 (39), p.44550-44560

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.n/a

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge 4 Se 9

Advanced materials (Weinheim), 2023-03, Vol.35 (13)

2023

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge 4 Se 9

Advanced materials (Weinheim), 2022-10, Vol.34 (41)

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2023-03, Vol.35 (13), p.n/a

2023

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A pentagonal 2D layered PdSe2-based synaptic device with a graphene floating gate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-11, Vol.10 (43), p.16536-16545

2022

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A pentagonal 2D layered PdSe 2 -based synaptic device with a graphene floating gate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-11, Vol.10 (43), p.16536-16545

2022

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A pentagonal 2D layered PdSe-based synaptic device with a graphene floating gate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-11, Vol.1 (43), p.16536-16545

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.e2204982-e2204982

2022

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Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

2020 Conference on Lasers and Electro-Optics (CLEO), 2020, p.1-2

2020

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Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles

Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride

IGZO charge trap flash device for reconfigurable logic functions

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

A study on pattern classifications with MoS2-based CTF synaptic device

Position and Frequency Control of Strain-Induced Quantum Emitters in WSe 2 Monolayers

Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices (Adv. Funct. Mater. 10/2024)

Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices

Layer-Controlled Growth of Single-Crystalline 2D Bi 2 O 2 Se Film Driven by Interfacial Reconstruction

Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction

Surface-Dominated HfO 2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge 4 Se 9

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge 4 Se 9

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

A pentagonal 2D layered PdSe2-based synaptic device with a graphene floating gate

A pentagonal 2D layered PdSe 2 -based synaptic device with a graphene floating gate

A pentagonal 2D layered PdSe-based synaptic device with a graphene floating gate

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9

Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

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