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Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications

APL materials, 2022-06, Vol.10 (6), p.060701-060701-20

2022

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Impact of a small change in growth temperature on the tail states of GaAsBi

Journal of applied physics, 2019-07, Vol.126 (4)

2019

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Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface

Semiconductor science and technology, 2022-06, Vol.37 (6), p.65016

2022

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Bismuth induced enhancement of Rashba spin–orbit interaction in GaAsBi/GaAs heterostructures

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95020

2021

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Crystallographic and band structure analysis of β-(AlxGa1−x)2O3/β-(InyGa1−y)2O3 thin film grown on β-Ga2O3 substrate via mist CVD

AIP advances, 2024-04, Vol.14 (4)

2024

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Epitaxial growth of metastable c-plane rhombohedral indium tin oxide using mist chemical vapor deposition

Materials science in semiconductor processing, 2022-08, Vol.147, p.106689, Article 106689

2022

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High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

AIP advances, 2024-01, Vol.14 (1), p.015040-015040-5

2024

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Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence

Materials science in semiconductor processing, 2023-08, Vol.162, p.107543, Article 107543

2023

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Mist-CVD-derived Hf0.55Zr0.45O2 ferroelectric thin films post-annealed by rapid thermal annealing

AIP advances, 2023-01, Vol.13 (1), p.015304-015304-9

2023

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Phase control of α- and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers

AIP advances, 2020-05, Vol.10 (5), p.055310-055310-5

2020

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Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.11003

2023

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Impact of α-Fe2O3 Buffer Layer Growth Time on the α-Ga2O3 Grown on LiTaO3 Substrates

Journal of the Society of Materials Science, Japan, 2022/10/15, Vol.71(10), pp.830-834

2022

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Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Journal of physics. D, Applied physics, 2021-08, Vol.54 (34), p.345109

2021

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Solution-based mist CVD technique for CH3NH3Pb(Br1−xClx)3 inorganic-organic perovskites

Japanese Journal of Applied Physics, 2016-10, Vol.55 (10)

2016

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Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2008-06, Vol.47 (6R), p.4669

2008

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Single-Domain and Atomically Flat Surface of κ‑Ga2O3 Thin Films on FZ-Grown ε‑GaFeO3 Substrates via Step-Flow Growth Mode

ACS omega, 2020-11, Vol.5 (45), p.29585-29592

2020

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Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

Materials letters. X, 2022-06, Vol.14, p.100149, Article 100149

2022

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Electronic Materials Accelerating the Development of Ubiquitous Devices: III: Mist Chemical Vapor Deposition: A Tool for Tailoring Ga2O3 Crystal Polymorphism

Journal of the Society of Materials Science, Japan, 2023/10/15, Vol.72(10), pp.750-756

NISHINAKA, Hiroyuki

2023

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Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

MRS Advances, 2020-01, Vol.5 (31-32), p.1671-1679

2020

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Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLB10

2019

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Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various α‑Al2O3 Substrates

Crystal growth & design, 2018-07, Vol.18 (7), p.4022-4028

2018

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Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique

Physica status solidi. B. Basic research, 2010-06, Vol.247 (6), p.1460-1463

2010

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Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.5007-5010

2008

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LiTaO3基板上へのα-Ga2O3の成長にα-Fe2O3バッファ層の成長時間が与える影響

材料, 2022/10/15, Vol.71(10), pp.830-834

2022

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Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications

Impact of a small change in growth temperature on the tail states of GaAsBi

Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface

Bismuth induced enhancement of Rashba spin–orbit interaction in GaAsBi/GaAs heterostructures

Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing

Crystallographic and band structure analysis of β-(AlxGa1−x)2O3/β-(InyGa1−y)2O3 thin film grown on β-Ga2O3 substrate via mist CVD

Epitaxial growth of metastable c-plane rhombohedral indium tin oxide using mist chemical vapor deposition

High conductivity of n-type β-Ga2O3(010) thin films achieved through Si doping by mist chemical vapor deposition

Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence

Mist-CVD-derived Hf0.55Zr0.45O2 ferroelectric thin films post-annealed by rapid thermal annealing

Phase control of α- and κ-Ga2O3 epitaxial growth on LiNbO3 and LiTaO3 substrates using α-Fe2O3 buffer layers

Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode

Impact of α-Fe2O3 Buffer Layer Growth Time on the α-Ga2O3 Grown on LiTaO3 Substrates

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy

Solution-based mist CVD technique for CH3NH3Pb(Br1−xClx)3 inorganic-organic perovskites

Growth of Crystalline Zinc Oxide Thin Films by Fine-Channel-Mist Chemical Vapor Deposition

Single-Domain and Atomically Flat Surface of κ‑Ga2O3 Thin Films on FZ-Grown ε‑GaFeO3 Substrates via Step-Flow Growth Mode

Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

Electronic Materials Accelerating the Development of Ubiquitous Devices: III: Mist Chemical Vapor Deposition: A Tool for Tailoring Ga2O3 Crystal Polymorphism

Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides

Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n+-Si(100) substrates

Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various α‑Al2O3 Substrates

Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique

Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE

LiTaO3基板上へのα-Ga2O3の成長にα-Fe2O3バッファ層の成長時間が与える影響

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