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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

1, 2018

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Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2691-2699

2016

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3-D thermal models calibration by parametric dynamic compact thermal models

Microelectronics and reliability, 2017-12, Vol.79, p.371-379

2017

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Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

Microelectronics and reliability, 2016-12, Vol.67, p.38-45

2016

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A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.361-367

2017

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Versatile MOR-based boundary condition independent compact thermal models with multiple heat sources

Microelectronics and reliability, 2018-08, Vol.87, p.194-205

2018

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Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies

Microelectronics and reliability, 2017-11, Vol.78, p.233-242

2017

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Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization

Microelectronics and reliability, 2018-08, Vol.87, p.222-231

2018

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Partition-based approach to parametric dynamic compact thermal modeling

Microelectronics and reliability, 2017-12, Vol.79, p.361-370

2017

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Analysis of the thermal behavior of AlGaN/GaN HEMTs

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (15), p.1343-1351

2012

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Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1713-1718

2013

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Analysis of Electrothermal Effects in Bipolar Differential Pairs

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.966-978

2011

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Theory of electrothermal behavior of bipolar transistors: part III-impact ionization

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1683-1697

2006

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Theory of electrothermal behavior of bipolar transistors: Part I -single-finger devices

IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.2009-2021

2005

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Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (15), p.1233-1238

2012

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Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.483-491

2009

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Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1309-1321

2009

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Physical and Electrical Performance Limits of High-Speed Si GeC HBTs-Part II: Lateral Scaling

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3697-3706

2011

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On the safe operating area of bipolar cascode amplifiers

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.171-174

2013

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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1035-1050

2017

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Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II – Dynamic analysis

Solid-state electronics, 2010-08, Vol.54 (8), p.754-762

2010

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Generalized image method with application to the thermal modeling of power devices and circuits

IEEE transactions on electron devices, 2002-04, Vol.49 (4), p.679-686

Rinaldi, N.

2002

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Restabilizing mechanisms after the onset of thermal instability in bipolar transistors

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.643-653

2006

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Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part II: Lateral Scaling

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3697-3706

2011

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Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I – Static analysis

Solid-state electronics, 2010-08, Vol.54 (8), p.745-753

2010

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Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

3-D thermal models calibration by parametric dynamic compact thermal models

Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

A Deterministic and Self-Consistent Solver for the Coupled Carrier-Phonon System in SiGe HBTs

Versatile MOR-based boundary condition independent compact thermal models with multiple heat sources

Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies

Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization

Partition-based approach to parametric dynamic compact thermal modeling

Analysis of the thermal behavior of AlGaN/GaN HEMTs

Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations

Analysis of Electrothermal Effects in Bipolar Differential Pairs

Theory of electrothermal behavior of bipolar transistors: part III-impact ionization

Theory of electrothermal behavior of bipolar transistors: Part I -single-finger devices

Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications

Influence of Concurrent Electrothermal and Avalanche Effects on the Safe Operating Area of Multifinger Bipolar Transistors

Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects

Physical and Electrical Performance Limits of High-Speed Si GeC HBTs-Part II: Lateral Scaling

On the safe operating area of bipolar cascode amplifiers

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II – Dynamic analysis

Generalized image method with application to the thermal modeling of power devices and circuits

Restabilizing mechanisms after the onset of thermal instability in bipolar transistors

Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part II: Lateral Scaling

Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I – Static analysis

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