UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Digitale Pragmatik

1st Aufl 2023rd edition, 2023

Volltextzugriff (PDF)

Rezension: Neuhaus, Laura (2019): Linguistik der Litotes im Deutschen – Syntax, Semantik und Pragmatik einer ‚nicht uninteressanten‘ Redefigur. Berlin: De Gruyter

Linguistische Berichte, 2022-11, Vol.2022 (272), p.97-102

Mroczynski, Robert

2022

Volltextzugriff (PDF)

Strong second-harmonic response from semiconductor–dielectric interfaces

Applied optics (2004), 2021-02, Vol.60 (5), p.1132

2021

Volltextzugriff (PDF)

Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx

Solid-state electronics, 2019-09, Vol.159, p.157-164

2019

Volltextzugriff (PDF)

50 Jahre Speech-Acts: Bilanz und Perspektiven

1, 2019

Volltextzugriff (PDF)

Characterization of dielectric layers grown at low temperature by atomic layer deposition

Thin solid films, 2015-02, Vol.577, p.97-102

2015

Volltextzugriff (PDF)

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Materials, 2021-09, Vol.14 (18), p.5395

2021

Volltextzugriff (PDF)

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

physica status solidi (b), 2018-10, Vol.255 (10), p.n/a

2018

Volltextzugriff (PDF)

Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (18), p.n/a

2019

Volltextzugriff (PDF)

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Materials, 2021-11, Vol.14 (23), p.7364

2021

Volltextzugriff (PDF)

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO x N y ) Thin Films

Materials, 2023-03, Vol.16 (6), p.2539

2023

Volltextzugriff (PDF)

Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

Microelectronic engineering, 2020-05, Vol.228, p.111332, Article 111332

2020

Volltextzugriff (PDF)

Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks

Microelectronic engineering, 2017-06, Vol.178, p.116-121

2017

Volltextzugriff (PDF)

Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma

Physica status solidi. PSS-RRL. Rapid research letters, 2018-08, Vol.12 (8), p.n/a

2018

Volltextzugriff (PDF)

Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Nanomaterials (Basel, Switzerland), 2020-11, Vol.10 (12), p.2387

2020

Volltextzugriff (PDF)

Sprachliche Grenzziehungspraktiken: Analysefelder und Perspektiven

1, 2023

Volltextzugriff (PDF)

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Applied surface science, 2014-05, Vol.301, p.28-33

2014

Volltextzugriff (PDF)

Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials

Crystals (Basel), 2020-05, Vol.10 (5), p.384

2020

Volltextzugriff (PDF)

Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

Volltextzugriff (PDF)

Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures

Microelectronic engineering, 2015-11, Vol.147, p.349-353

2015

Volltextzugriff (PDF)

Gesprächslinguistik: Eine Einführung

Mroczynski, Robert

1, 2014

Volltextzugriff (PDF)

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Applied surface science, 2012-08, Vol.258 (21), p.8366-8370

2012

Volltextzugriff (PDF)

Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

Physica status solidi. C, 2016-12, Vol.13 (10-12), p.816-821

2016

Volltextzugriff (PDF)

Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO 2) layers for non-volatile semiconductor memory (NVSM) applications

Microelectronics and reliability, 2012, Vol.52 (1), p.107-111

2012

Volltextzugriff (PDF)

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-09, Vol.177 (15), p.1281-1285

2012

Volltextzugriff (PDF)

1 – 25 von 164

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(51)
Mit Volltextzugriff
(156)

Publikationsform

Sprache

Deutsch
(115)
Englisch
(52)
Japanisch
(6)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(30)
Science & Technology
(30)
Physics
(26)
Technology
(26)
Physics, Applied
(24)
Materials Science
(16)
Materials Science, Multidisciplinary
(13)
Physics, Condensed Matter
(13)
Electrical Characterization
(12)
Engineering
(11)
Engineering, Electrical & Electronic
(11)
Nanoscience & Nanotechnology
(11)
Science & Technology - Other Topics
(11)
Hafnium Oxide
(10)
Pecvd
(10)
High-K Dielectric
(8)
Optics
(8)
Chemistry
(7)
Electrical Properties
(7)
Chemical Vapor Deposition
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Digitale Pragmatik

Rezension: Neuhaus, Laura (2019): Linguistik der Litotes im Deutschen – Syntax, Semantik und Pragmatik einer ‚nicht uninteressanten‘ Redefigur. Berlin: De Gruyter

Strong second-harmonic response from semiconductor–dielectric interfaces

Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx

50 Jahre Speech-Acts: Bilanz und Perspektiven

Characterization of dielectric layers grown at low temperature by atomic layer deposition

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures

Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO x N y ) Thin Films

Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stacks

Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma

Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures

Sprachliche Grenzziehungspraktiken: Analysefelder und Perspektiven

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials

Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures

Gesprächslinguistik: Eine Einführung

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO 2) layers for non-volatile semiconductor memory (NVSM) applications

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Suchergebnisse filtern