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Rashba effect resonant tunneling spin filters

Proceedings of the IEEE, 2003, Vol.91 (5), p.741-751

2003

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IEEE_Xplore

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

IEEE transactions on electron devices, 2000-05, Vol.47 (5), p.1052-1060

2000

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IEEE_Xplore

Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors

2012

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Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

MRS proceedings, 1995, Vol.395, Article 243

1995

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Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors

1, 1989

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The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Solid-state electronics, 2000-02, Vol.44 (2), p.221-228

2000

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Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization

Superlattices and microstructures, 2001-12, Vol.30 (6), p.309-319

2001

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Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

Applied surface science, 2004-01, Vol.222 (1-4), p.6-12

2004

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The peroxy radical model for the chemisorption of O2 onto silicon surfaces

Solid state communications, 1976-01, Vol.18 (8), p.981-984

1976

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The role of materials in the electronics world of 2012 A.D.: An update

Proceedings of the IEEE, 1999, Vol.87 (5), p.924-926

McGill, T.C.

1999

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IEEE_Xplore

Schottky barrier heights on p-type diamond and silicon carbide (6h)

Physics letters. A, , Vol.58 (4), p.249-251

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Exciton capture cross sections of indium and boron impurities in silicon

Solid state communications, 1980-12, Vol.36 (12), p.1039-1045

1980

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Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Journal of crystal growth, 2000, Vol.208 (1), p.183-188

2000

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Megaplasmid and chromosomal loci for the PHB degradation pathway in Rhizobium (Sinorhizobium) meliloti

Genetics (Austin), 1997-08, Vol.146 (4), p.1211-1220

1997

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n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

Journal of applied physics, 1993-05, Vol.73 (9), p.4660-4668

1993

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Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

Solid state communications, 1978-01, Vol.28 (7), p.491-496

1978

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Nitride based high power devices: design and fabrication issues

Solid-state electronics, 1998-12, Vol.42 (12), p.2289-2294

1998

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Bound exciton lifetimes for acceptors in Si

Solid state communications, 1977-08, Vol.23 (7), p.425-428

1977

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Binding of an exciton to a neutral acceptor

Solid state communications, 1976-01, Vol.18 (11), p.1557-1560

1976

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Luminescence of bound exciton and bound multiexciton complexes in Si:Li

Solid state communications, , Vol.28 (4), p.317-320

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A transistorless-current-mode static RAM architecture

IEEE journal of solid-state circuits, 1998-04, Vol.33 (4), p.669-672

1998

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IEEE_Xplore

Absorption and luminescence of the bound exciton in thallium doped silicon

Solid state communications, 1978-07, Vol.27 (3), p.317-320

1978

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Dependence of the I-V curve of a metal insulator semiconductor switch on insulator thickness-an experimental and theoretical investigation

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.286-292

1998

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IEEE_Xplore

Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Thin solid films, 1997-02, Vol.294 (1), p.105-111

1997

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Compositionally Dependent Band Offsets In Aln/Al x Ga 1-x N Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

MRS proceedings, 1997, Vol.482, Article 775

1997

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Rashba effect resonant tunneling spin filters

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors

Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors

The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices

Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization

Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy

The peroxy radical model for the chemisorption of O2 onto silicon surfaces

The role of materials in the electronics world of 2012 A.D.: An update

Schottky barrier heights on p-type diamond and silicon carbide (6h)

Exciton capture cross sections of indium and boron impurities in silicon

Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer

Megaplasmid and chromosomal loci for the PHB degradation pathway in Rhizobium (Sinorhizobium) meliloti

n-CdSe/p-ZnTe based wide band-gap light emitters : numerical simulation and design

Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon

Nitride based high power devices: design and fabrication issues

Bound exciton lifetimes for acceptors in Si

Binding of an exciton to a neutral acceptor

Luminescence of bound exciton and bound multiexciton complexes in Si:Li

A transistorless-current-mode static RAM architecture

Absorption and luminescence of the bound exciton in thallium doped silicon

Dependence of the I-V curve of a metal insulator semiconductor switch on insulator thickness-an experimental and theoretical investigation

Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

Compositionally Dependent Band Offsets In Aln/Al x Ga 1-x N Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy

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