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Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

ACS applied materials & interfaces, 2018-07, Vol.10 (28), p.24028-24036

2018

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Retracted: High‐Efficiency, Blue, Green, and Near‐Infrared Light‐Emitting Diodes Based on Triple Cation Perovskite

Advanced optical materials, 2017-04, Vol.5 (7)

2017

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ZnO Nanoparticles for Quantum-Dot-Based Light-Emitting Diodes

ACS applied nano materials, 2020-06, Vol.3 (6), p.5203-5211

2020

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Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

ACS applied materials & interfaces, 2016-10, Vol.8 (42), p.28727-28736

2016

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Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer

ACS applied materials & interfaces, 2015-11, Vol.7 (44), p.24592-24600

2015

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Low Work Function 2.81 eV Rb2CO3‑Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

ACS applied materials & interfaces, 2018-06, Vol.10 (22), p.18993-19001

2018

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Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layerElectronic supplementary information (ESI) available: TEM image and optical characteristics of green QDs, XPS depth profiles of Cu-NiO : PFI layers with varying PFI blending ratio, UPS spectra and energy band diagram of Cu-NiO : PFI thin-films on ITO, device performance of all solution processed QLEDs with various PFI blending ratio in Cu-NiO. Current density and luminance characteris

2018-04

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Low Work Function 2.81 eV Rb 2 CO 3 -Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

ACS applied materials & interfaces, 2018-06, Vol.10 (22), p.18993-19001

2018

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Highly Robust, Flexible Top‐Emission Organic Light‐Emitting Diode Exhibiting Stable Performance under Infolding of Curvature Radius of 0.32 mm

Advanced engineering materials, 2021-07, Vol.23 (7), p.n/a

2021

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High‐Efficiency, Blue, Green, and Near‐Infrared Light‐Emitting Diodes Based on Triple Cation Perovskite

Advanced optical materials, 2017-04, Vol.5 (7), p.np-n/a

2017

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Solution-Processed Metal-Oxide p–n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting Diodes

ACS applied materials & interfaces, 2017-11, Vol.9 (44), p.38678-38686

2017

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Solution-processed nickel oxide nanoparticles with NiOOH for hole injection layers of high-efficiency organic light-emitting diodes

Nanoscale, 2016-10, Vol.8 (40), p.17608-17615

2016

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Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane

Journal of the Society for Information Display, 2020-06, Vol.28 (6), p.469-475

2020

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Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Journal of the Society for Information Display, 2019-08, Vol.27 (8), p.507-513

2019

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High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

Advanced functional materials, 2018-08, Vol.28 (34), p.n/a

2018

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Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale, 2018-04, Vol.10 (15), p.7281-7290

2018

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Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (32), p.182-191

2019

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Feedforward Pitch Control Using Wind Speed Estimation

Journal of Power Electronics, 2011, 11(2), , pp.211-217

2011

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61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.913-916

2020

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High Hall Mobility P‐type Cu 2 SnS 3 ‐Ga 2 O 3 with a High Work Function

Advanced functional materials, 2018-08, Vol.28 (34)

2018

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80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1080-1083

2018

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P‐14: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1263-1266

2019

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P‐14: Distinguished Poster: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1263-1266

2019

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Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p‑Type WO x Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer

ACS applied materials & interfaces, 2015-11, Vol.7 (44), p.24592-24600

2015

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Quantum‐Dots Photosensor with Wide Bandgap P‐Type and N‐Type Oxide Semiconductors for High Detectivity and Responsivity

Advanced materials technologies, 2020-01, Vol.5 (1), p.n/a

2020

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Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

Retracted: High‐Efficiency, Blue, Green, and Near‐Infrared Light‐Emitting Diodes Based on Triple Cation Perovskite

ZnO Nanoparticles for Quantum-Dot-Based Light-Emitting Diodes

Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting Diodes

Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer

Low Work Function 2.81 eV Rb2CO3‑Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

Low Work Function 2.81 eV Rb 2 CO 3 -Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

Highly Robust, Flexible Top‐Emission Organic Light‐Emitting Diode Exhibiting Stable Performance under Infolding of Curvature Radius of 0.32 mm

High‐Efficiency, Blue, Green, and Near‐Infrared Light‐Emitting Diodes Based on Triple Cation Perovskite

Solution-Processed Metal-Oxide p–n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting Diodes

Solution-processed nickel oxide nanoparticles with NiOOH for hole injection layers of high-efficiency organic light-emitting diodes

Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers

Feedforward Pitch Control Using Wind Speed Estimation

61‐3: Distinguished Paper: Vertically Integrated, Double‐Stack Oxide‐TFT Layers for High‐Resolution AMOLED Backplane

High Hall Mobility P‐type Cu 2 SnS 3 ‐Ga 2 O 3 with a High Work Function

80‐2: AMQLED Display with Solution‐Processed Oxide TFT Backplane

P‐14: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting

P‐14: Distinguished Poster: Highly Robust Oxide TFT with Bulk Accumulation and Source/Drain/Active Layer Splitting

Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p‑Type WO x Doped PEDOT:PSS and Li Doped ZnO Charge Generation Layer

Quantum‐Dots Photosensor with Wide Bandgap P‐Type and N‐Type Oxide Semiconductors for High Detectivity and Responsivity

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