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Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

Applied physics letters, 2011-09, Vol.99 (11), p.113501-113501-3

2011

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Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2197-2199

2016

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Negative Capacitance Behavior in a Leaky Ferroelectric

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4416-4422

2016

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Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

IEEE electron device letters, 2017-09, Vol.38 (9), p.1335-1338

2017

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Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2543-2548

2021

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Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

IEEE electron device letters, 2021-08, Vol.42 (8), p.1160-1163

2021

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Conditions for Domain-Free Negative Capacitance

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.1-4

2023

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Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

IEEE electron device letters, 2016-01, Vol.37 (1), p.111-114

2016

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Drain-Erase Scheme in Ferroelectric Field Effect Transistor-Part II: 3-D-NAND Architecture for In-Memory Computing

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.962-967

2020

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Drain-Erase Scheme in Ferroelectric Field-Effect Transistor-Part I: Device Characterization

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.955-961

2020

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Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

Nanotechnology, 2020-12, Vol.31 (50), p.505707-505707

2020

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Investigating Ferroelectric Minor Loop Dynamics and History Effect-Part II: Physical Modeling and Impact on Neural Network Training

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3598-3604

2020

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Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

IEEE electron device letters, 2017-01, Vol.38 (1), p.142-144

2017

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Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5948-5951

2022

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Ferroelectric negative capacitance domain dynamics

Journal of applied physics, 2018-05, Vol.123 (18)

2018

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Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3176-3180

2021

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Single crystal functional oxides on silicon

Nature communications, 2016-02, Vol.7 (1), p.10547-10547, Article 10547

2016

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Why Do Ferroelectrics Exhibit Negative Capacitance?

Materials, 2019-11, Vol.12 (22), p.3743

2019

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A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.109-114

2022

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Investigating Ferroelectric Minor Loop Dynamics and History Effect-Part I: Device Characterization

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3592-3597

2020

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BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2094-2100

2022

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Non-volatile, small-signal capacitance in ferroelectric capacitors

Applied physics letters, 2020-08, Vol.117 (7)

2020

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Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition

Journal of materials research, 2021-03, Vol.36 (5), p.1206-1213

2021

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Antiferroelectric negative capacitance from a structural phase transition in zirconia

Nature communications, 2022-03, Vol.13 (1), p.1228-1228, Article 1228

2022

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Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals

Applied physics letters, 2018-05, Vol.112 (22)

2018

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Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

Negative Capacitance Behavior in a Leaky Ferroelectric

Work Function Engineering for Performance Improvement in Leaky Negative Capacitance FETs

Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

Conditions for Domain-Free Negative Capacitance

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Drain-Erase Scheme in Ferroelectric Field Effect Transistor-Part II: 3-D-NAND Architecture for In-Memory Computing

Drain-Erase Scheme in Ferroelectric Field-Effect Transistor-Part I: Device Characterization

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

Investigating Ferroelectric Minor Loop Dynamics and History Effect-Part II: Physical Modeling and Impact on Neural Network Training

Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

Characterizing HfO2-Based Ferroelectric Tunnel Junction in Cryogenic Temperature

Ferroelectric negative capacitance domain dynamics

Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process

Single crystal functional oxides on silicon

Why Do Ferroelectrics Exhibit Negative Capacitance?

A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure

Investigating Ferroelectric Minor Loop Dynamics and History Effect-Part I: Device Characterization

BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update

Non-volatile, small-signal capacitance in ferroelectric capacitors

Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals

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