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Prevalence of maternal burn out and depression in tunisia during the coronavirus pandemic

European psychiatry, 2021-04, Vol.64 (S1), p.S261-S261

2021

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Ge dot organization on Si substrates patterned by focused ion beam

Applied physics letters, 2004-12, Vol.85 (26), p.6401-6403

2004

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Ge quantum dot tunneling diode with room temperature negative differential resistance

Applied physics letters, 2010-07, Vol.97 (1), p.012101-012101-3

2010

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Ordering of Ge nanocrystals using FIB nanolithography

Surface science, 2007-07, Vol.601 (13), p.2769-2773

2007

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Optoelectronic properties in quantum-confined germanium dots

Applied physics letters, 2007-10, Vol.91 (14), p.141117-141117-3

2007

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Charge carrier traffic at self-assembled Ge quantum dots on Si

Solid-state electronics, 2013-05, Vol.83, p.99-106

2013

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Local strained silicon platform based on differential SiGe/Si epitaxy

Journal of crystal growth, 2011-06, Vol.324 (1), p.154-156

2011

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Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Germanium vertical Tunneling Field-Effect Transistor

Solid-state electronics, 2011-08, Vol.62 (1), p.132-137

2011

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Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots

Journal of nanoscience and nanotechnology, 2007-01, Vol.7 (1), p.316

2007

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Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

Journal of applied physics, 2007-11, Vol.102 (9), p.093704-093704-4

2007

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Hole emission mechanism in Ge/Si quantum dots

Physica status solidi. C, 2011-02, Vol.8 (2), p.411-413

2011

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MBE growth of Ge quantum dot structures in oxide windows

IOP conference series. Materials Science and Engineering, 2009-11, Vol.6 (1), p.012020-012020

2009

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NANOSIL network of excellence—silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.148-159

2008

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Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

Materials science in semiconductor processing, 2006-08, Vol.9 (4-5), p.812-816

2006

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Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO2 layers

Journal of physics. Conference series, 2005, Vol.10 (1), p.73

2005

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Photoluminescence of Ge nanocrystals self-assembled on SiO2

Superlattices and microstructures, 2008-10, Vol.44 (4-5), p.305-314

2008

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Ge quantum dot Schottky diode operated in a 89GHz Rectenna

Ulis 2011 Ultimate Integration on Silicon, 2011, p.1-3

2011

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Growth of ultrahigh-density quantum-confined germaniumdots on Si O 2 thin films

Applied physics letters, 2006-08, Vol.89 (6), p.063122-063122-3

2006

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Growth of ultrahigh-density quantum-confined germanium dots on Si O 2 thin films

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Photocurrent generation from Ge nanodots in the near UV and visible region

Superlattices and microstructures, 2008-10, Vol.44 (4), p.331-336

2008

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Formation and ordering of Ge nanocrystals on SiO 2 using FIB nanolithography

Materials science in semiconductor processing, 2006, Vol.9 (4), p.812-816

2006

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Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO 2 layers

Journal of physics. Conference series, 2005-01, Vol.10, p.73-76

2005

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Formation and ordering of Ge nanocrystals on Si O 2

Physical review. B, Condensed matter and materials physics, 2006-02, Vol.73 (7), Article 075323

2006

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Isotonic M-estimation of location: union-intersection principle and preliminary test versions

Journal of multivariate analysis, 1988-10, Vol.27 (1), p.300-318

1988

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Prevalence of maternal burn out and depression in tunisia during the coronavirus pandemic

Ge dot organization on Si substrates patterned by focused ion beam

Ge quantum dot tunneling diode with room temperature negative differential resistance

Ordering of Ge nanocrystals using FIB nanolithography

Optoelectronic properties in quantum-confined germanium dots

Charge carrier traffic at self-assembled Ge quantum dots on Si

Local strained silicon platform based on differential SiGe/Si epitaxy

Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films

Germanium vertical Tunneling Field-Effect Transistor

Ge quantum dot memory structure with laterally ordered highly dense arrays of Ge dots

Memory and Coulomb blockade effects in germanium nanocrystals embedded in amorphous silicon on silicon dioxide

Hole emission mechanism in Ge/Si quantum dots

MBE growth of Ge quantum dot structures in oxide windows

NANOSIL network of excellence—silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO2 layers

Photoluminescence of Ge nanocrystals self-assembled on SiO2

Ge quantum dot Schottky diode operated in a 89GHz Rectenna

Growth of ultrahigh-density quantum-confined germaniumdots on Si O 2 thin films

Growth of ultrahigh-density quantum-confined germanium dots on Si O 2 thin films

Photocurrent generation from Ge nanodots in the near UV and visible region

Formation and ordering of Ge nanocrystals on SiO 2 using FIB nanolithography

Two-dimensional arrays of ordered, highly dense and ultra-small Ge nanocrystals on thin SiO 2 layers

Formation and ordering of Ge nanocrystals on Si O 2

Isotonic M-estimation of location: union-intersection principle and preliminary test versions

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