UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Diagnostic performance of CT with Valsalva maneuver for the diagnosis and characterization of inguinal hernias

Hernia : the journal of hernias and abdominal wall surgery, 2023-10, Vol.27 (5), p.1253-1261

2023

Volltextzugriff (PDF)

Development of a textronic heating system using machine em-broidery technique for people with Raynaud's disease

Journal of achievements in materials and manufacturing engineering, 2023-12, Vol.121 (2), p.1-2

2023

Volltextzugriff (PDF)

Deep Level Transient Spectroscopy in Quantum Dot Characterization

Nanoscale research letters, 2008-05, Vol.3 (5), p.179-185, Article 179

2008

Volltextzugriff (PDF)

Confined energy states in quantum dots detected by a resonant differential capacitance method

Applied physics letters, 2009-07, Vol.95 (1), p.013104-013104-3

2009

Volltextzugriff (PDF)

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Journal of electronic materials, 2010-06, Vol.39 (6), p.766-772

2010

Volltextzugriff (PDF)

Charge carrier traffic at self-assembled Ge quantum dots on Si

Solid-state electronics, 2013-05, Vol.83, p.99-106

2013

Volltextzugriff (PDF)

Degradation study in SCH-SQW GaAs/AlGaAs lasers

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.327-330

Kaniewska, M.

2003

Volltextzugriff (PDF)

Electron capture cross sections of InAs∕GaAs quantum dots

Applied physics letters, 2004-10, Vol.85 (14), p.2908-2910

2004

Volltextzugriff (PDF)

Discovery of classes among deep level centers in gallium arsenide

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-03, Vol.138 (1), p.12-15

2007

Volltextzugriff (PDF)

Electrical characterization of 6H-SiC grown by physical vapor transport method

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.23-27

2009

Volltextzugriff (PDF)

Deep Level Transient Spectroscopy in Quantum Dot Characterization

Nanoscale research letters, 2008-05, Vol.3 (5), p.179-185

2008

Volltextzugriff (PDF)

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 2009-11, Vol.165 (1), p.98-102

2009

Volltextzugriff (PDF)

Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities

AIP conference proceedings, 2011, Vol.1399 (1)

2011

Volltextzugriff (PDF)

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.987-991

2007

Volltextzugriff (PDF)

Hole emission mechanism in Ge/Si quantum dots

Physica status solidi. C, 2011-02, Vol.8 (2), p.411-413

2011

Volltextzugriff (PDF)

Investigations of surface defects of GaAs grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.512-515

2002

Volltextzugriff (PDF)

Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells

AIP conference proceedings, 2011, Vol.1399 (1)

2011

Volltextzugriff (PDF)

Anomalies in characteristics of broad-contact ridge waveguide SCH-SQW lasers based on AlGaAs/InGaAs grown by MBE

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.44-49

2003

Volltextzugriff (PDF)

Electrical activity of deep traps in p-type Si

Solar energy materials and solar cells, 2002-04, Vol.72 (1), p.509-515

2002

Volltextzugriff (PDF)

Electrical study of InAs/GaAs quantum dots with two different environments

Physica status solidi. C, 2008-07, Vol.5 (9), p.2926-2928

2008

Volltextzugriff (PDF)

Electrical activity of deep levels in the presence of InAs/GaAs quantum dots

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.36-40

2006

Volltextzugriff (PDF)

Deep levels in Yb–Al co-doped GaAs grown by liquid phase epitaxy

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.366-370

2006

Volltextzugriff (PDF)

Deep-level defects induced by Ar-ion beam etching in n-type AlxGa1-xAs grown by MBE

Crystal research and technology (1979), 2003-04, Vol.38 (3-5), p.351-358

2003

Volltextzugriff (PDF)

Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressure

Crystal research and technology (1979), 2003-04, Vol.38 (3-5), p.336-343

2003

Volltextzugriff (PDF)

C-V Profiling of GaAs Using Electrolyte Barriers

Crystal research and technology (1979), 2001-10, Vol.36 (8-10), p.1113-1118

2001

Volltextzugriff (PDF)

1 – 25 von 126

Menü

Weitere Dienste

Einstellungen

Diagnostic performance of CT with Valsalva maneuver for the diagnosis and characterization of inguinal hernias

Development of a textronic heating system using machine em-broidery technique for people with Raynaud's disease

Deep Level Transient Spectroscopy in Quantum Dot Characterization

Confined energy states in quantum dots detected by a resonant differential capacitance method

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Charge carrier traffic at self-assembled Ge quantum dots on Si

Degradation study in SCH-SQW GaAs/AlGaAs lasers

Electron capture cross sections of InAs∕GaAs quantum dots

Discovery of classes among deep level centers in gallium arsenide

Electrical characterization of 6H-SiC grown by physical vapor transport method

Deep Level Transient Spectroscopy in Quantum Dot Characterization

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities

Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique

Hole emission mechanism in Ge/Si quantum dots

Investigations of surface defects of GaAs grown by molecular beam epitaxy

Spatial Variation of Hole Eigen Energies in Ge/Si Quantum Wells

Anomalies in characteristics of broad-contact ridge waveguide SCH-SQW lasers based on AlGaAs/InGaAs grown by MBE

Electrical activity of deep traps in p-type Si

Electrical study of InAs/GaAs quantum dots with two different environments

Electrical activity of deep levels in the presence of InAs/GaAs quantum dots

Deep levels in Yb–Al co-doped GaAs grown by liquid phase epitaxy

Deep-level defects induced by Ar-ion beam etching in n-type AlxGa1-xAs grown by MBE

Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressure

C-V Profiling of GaAs Using Electrolyte Barriers

Aktive Filter

Suchergebnisse filtern