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Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties

Nanoscale, 2022-04, Vol.14 (14), p.5551-5560

2022

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Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3654-3659

2022

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IEEE_Xplore

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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IEEE_Xplore

Bridging the gap between atomically thin semiconductors and metal leads

Nature communications, 2022-04, Vol.13 (1), p.1777-1777, Article 1777

2022

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O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-01, Vol.106 (3)

2015

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Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3215-3222

2015

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IEEE_Xplore

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE electron device letters, 2017-07, Vol.38 (7), p.929-932

2017

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IEEE_Xplore

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

IEEE electron device letters, 2018-07, Vol.39 (7), p.1003-1006

2018

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IEEE_Xplore

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

IEEE electron device letters, 2015-05, Vol.36 (5), p.448-450

2015

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IEEE_Xplore

OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs

IEEE journal of emerging and selected topics in power electronics, 2021-06, Vol.9 (3), p.3686-3694

2021

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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3831-3838

2018

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IEEE_Xplore

Dynamic R} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE electron device letters, 2017-07, Vol.38 (7), p.937-940

2017

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IEEE_Xplore

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2106-2112

2019

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IEEE_Xplore

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

IEEE electron device letters, 2015-12, Vol.36 (12), p.1287-1290

2015

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IEEE_Xplore

Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiN x /PECVD-SiN x Gate Dielectric Stack

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3185-3191

2018

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Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach

Energy reports, 2020-12, Vol.6, p.1099-1105

2020

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Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

IEEE electron device letters, 2016-03, Vol.37 (3), p.265-268

2016

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IEEE_Xplore

Dependence of } Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

IEEE electron device letters, 2018-03, Vol.39 (3), p.413-416

2018

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IEEE_Xplore

Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials

npj computational materials, 2023-09, Vol.9 (1), p.1-10, Article 159

2023

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Dynamic OFF-State Current (Dynamic } ) in -GaN Gate HEMTs With an Ohmic Gate Contact

IEEE electron device letters, 2018-09, Vol.39 (9), p.1366-1369

2018

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IEEE_Xplore

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.358-364

2020

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Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

IEEE electron device letters, , Vol.40 (4), p.526-529

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IEEE_Xplore

Compatibility of AlN/SiN x Passivation With LPCVD-SiN x Gate Dielectric in GaN-Based MIS-HEMT

IEEE electron device letters, 2016-03, Vol.37 (3), p.265-268

2016

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Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties

Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Bridging the gap between atomically thin semiconductors and metal leads

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Dynamic R} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiN x /PECVD-SiN x Gate Dielectric Stack

Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

Dependence of } Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials

Dynamic OFF-State Current (Dynamic } ) in -GaN Gate HEMTs With an Ohmic Gate Contact

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off

Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

Compatibility of AlN/SiN x Passivation With LPCVD-SiN x Gate Dielectric in GaN-Based MIS-HEMT

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