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TM- and TE-polarization-selective narrowband perfect absorber for near-ultraviolet light using Fano resonance in an aluminum nanohole array structure

Applied physics. B, Lasers and optics, 2024-04, Vol.130 (4)

2024

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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Journal of crystal growth, 2016-12, Vol.456, p.155-159

2016

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Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1S), p.1

2018

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Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures

Journal of the European Optical Society. Rapid publications, 2021-04, Vol.17 (1), p.1-9, Article 6

2021

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Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

Applied physics express, , Vol.9 (2)

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Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions

Journal of crystal growth, 2017-06, Vol.468, p.845-850

2017

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Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates

Journal of crystal growth, 2017-06, Vol.468, p.851-855

2017

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Fabrication and characterization of plasmonic band-stop filter using Ag grating

EPJ Web of Conferences, 2020, Vol.238, p.5006

2020

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Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Applied physics letters, 2012-07, Vol.101 (4), p.42110

2012

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Fabrication of Polarization Control Devices Using Metal Grating Structures

Optics and photonics journal, 2022, Vol.12 (9), p.201-213

2022

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High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S1), p.5-1-05FL03-4

2014

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Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media

Optics communications, 2015-04, Vol.341, p.64-68

2015

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A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells

Applied physics express, 2017-01, Vol.10 (1)

2017

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Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer

Plasmonics (Norwell, Mass.), 2015-12, Vol.10 (6), p.1657-1662

2015

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Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

Applied physics express, 2017-02, Vol.10 (2)

2017

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Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

Applied physics express, 2011-04, Vol.4 (4), p.042103-042103-2

2011

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Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

Applied physics letters, 2012-01, Vol.100 (1), p.011909-011909-3

2012

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Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states

Journal of physics. D, Applied physics, 2016-05, Vol.49 (24), p.245102-245114

2016

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Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.60311

2018

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Nitridating r -plane sapphire to improve crystal qualities and surface morphologies of a -plane GaN grown by metalorganic vapor phase epitaxy

Applied physics letters, 2009-09, Vol.95 (12), p.121910-121910-3

2009

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TM- and TE-polarization-selective narrowband perfect absorber for near-ultraviolet light using Fano resonance in an aluminum nanohole array structure

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures

Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire

Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates

Fabrication and characterization of plasmonic band-stop filter using Ag grating

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Fabrication of Polarization Control Devices Using Metal Grating Structures

High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media

A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells

Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer

Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency

Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states

Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells

Nitridating r -plane sapphire to improve crystal qualities and surface morphologies of a -plane GaN grown by metalorganic vapor phase epitaxy

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