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Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography

Journal of applied physics, 2022-07, Vol.132 (4)

2022

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Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

Journal of applied physics, 2024-03, Vol.135 (12)

2024

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3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Detailed Microstructure Characterizations of BEOL Cu Interconnects

Microscopy and microanalysis, 2018-08, Vol.24 (S1), p.2188-2189

2018

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Quantification of Composition of Epitaxial Si/SiGe by EELS

Microscopy and microanalysis, 2018-08, Vol.24 (S1), p.472-473

2018

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Validation of Minimum Electron Beam Dosage on Characterization of Carbon-Depletion in ULK Dielectric Materials by EELS Quantifications

Microscopy and microanalysis, 2018-08, Vol.24 (S1), p.1998-1999

2018

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Extending area selective deposition of ruthenium onto 3D SiO2-Si multilayer stacks

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-09, Vol.41 (5)

2023

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Area selective deposition of ruthenium on 3D structures

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2022-12, Vol.40 (6)

2022

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Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

Applied physics letters, 1998-02, Vol.72 (6), p.698-700

1998

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High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Applied physics letters, 2024-02, Vol.124 (7)

2024

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Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

Applied physics letters, 2023-01, Vol.122 (5)

2023

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Preface

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-01, Vol.28 (1), p.C1-C1a1

2010

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Minimize Electron Beam Damage during Characterization of Carbon-Depletion in Ultra Low-K Dielectric Materials by STEM EELS Elemental Mapping

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.334-335

2016

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Application of STEM EELS Quantification Relative Compositional Ratio Mapping to Characterize SiCOH - Ultra Low-k Dielectric Materials in Si-based Devices

Microscopy and microanalysis, 2016-07, Vol.22 (S3), p.1532-1533

2016

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Array Termination Impacts in Advanced SRAM

IEEE transactions on very large scale integration (VLSI) systems, 2017-09, Vol.25 (9), p.2449-2457

2017

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Characterization of Ultra Low-K Dielectric Materials by STEM EELS Elemental Mapping

Microscopy and microanalysis, 2015-08, Vol.21 (S3), p.2075-2076

2015

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Application of EFTEM and XEDS Elemental Mapping to Characterization of Nanometer Devices in Semiconductor Wafer-Foundries

Microscopy and microanalysis, 2015-08, Vol.21 (S3), p.279-280

2015

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Modeling and Optimization of Oxynitride Gate Dielectrics Formation by Remote Plasma Nitridation of Silicon Dioxide

Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1111-1116

1999

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Suppression of boron diffusion in deep submicron devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6), p.62201

2011

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Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2348-2356

2001

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Low Temperature Chemical Vapor Deposition of ZrO[sub 2] on Si(100) Using Anhydrous Zirconium (IV) Nitrate

Journal of the Electrochemical Society, 2000, Vol.147 (9), p.3472

2000

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Process and Electrical Characteristics of MO-ALD HfO2 Films for High-k Gate Applications Grown in a Production Worthy 300 mm Deposition System

ECS transactions, 2007, Vol.11 (3), p.55-69

2007

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Thermal Stability of HfN Compounds on HfO2/SiO2 Gate Stacks

ECS transactions, 2006, Vol.3 (2), p.185-190

2006

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Ni–Pt silicide formation through Ti mediating layers

Microelectronic engineering, 2007-11, Vol.84 (11), p.2511-2516

2007

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Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography

Intermixing of iron and cobalt with oxygen-rich magnesium oxide in CoFeB/MgO/CoFeB magnetic tunneling junctions

3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

Detailed Microstructure Characterizations of BEOL Cu Interconnects

Quantification of Composition of Epitaxial Si/SiGe by EELS

Validation of Minimum Electron Beam Dosage on Characterization of Carbon-Depletion in ULK Dielectric Materials by EELS Quantifications

Extending area selective deposition of ruthenium onto 3D SiO2-Si multilayer stacks

Area selective deposition of ruthenium on 3D structures

Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

Preface

Minimize Electron Beam Damage during Characterization of Carbon-Depletion in Ultra Low-K Dielectric Materials by STEM EELS Elemental Mapping

Application of STEM EELS Quantification Relative Compositional Ratio Mapping to Characterize SiCOH - Ultra Low-k Dielectric Materials in Si-based Devices

Array Termination Impacts in Advanced SRAM

Characterization of Ultra Low-K Dielectric Materials by STEM EELS Elemental Mapping

Application of EFTEM and XEDS Elemental Mapping to Characterization of Nanometer Devices in Semiconductor Wafer-Foundries

Modeling and Optimization of Oxynitride Gate Dielectrics Formation by Remote Plasma Nitridation of Silicon Dioxide

Suppression of boron diffusion in deep submicron devices

Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

Low Temperature Chemical Vapor Deposition of ZrO[sub 2] on Si(100) Using Anhydrous Zirconium (IV) Nitrate

Process and Electrical Characteristics of MO-ALD HfO2 Films for High-k Gate Applications Grown in a Production Worthy 300 mm Deposition System

Thermal Stability of HfN Compounds on HfO2/SiO2 Gate Stacks

Ni–Pt silicide formation through Ti mediating layers

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