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Analysis of Glycine max and Galega orientalis Nodules Revealed Specific Features of Symbiotic Interface Organization in Determinate and Indeterminate Nodules

Russian journal of plant physiology, 2023-12, Vol.70 (8), Article 192

2023

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Effect of Elevated Temperature on Premature Senescence in Nodules of Pea (Pisum sativum L.) sym26 and sym27 Mutants. II. Ultrastructural Organization

Russian journal of plant physiology, 2023-12, Vol.70 (8), Article 201

2023

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Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.731-734

2021

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Influence of neutron irradiation on optoelectronic properties of structures with the InAs/GaAs quantum dots

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12137

2019

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New Mineral-Like Gd- and B-Containing Compounds for Neutron Capture Therapy

Inorganic materials, 2020-02, Vol.56 (2), p.198-203

2020

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Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.465-467

2018

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Plasmon resonance induced photoconductivity of ZrO2(Y) films with embedded Au nanoparticles

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1525-1528

2018

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Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers

Semiconductors (Woodbury, N.Y.), 2018-06, Vol.52 (6), p.797-801

2018

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Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy

Semiconductors (Woodbury, N.Y.), 2017-04, Vol.51 (4), p.536-541

2017

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Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1395-1398

2017

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Temperature-dependent efficiency of the carrier emission from InAs/GaAs quantum dots

Materials research express, 2017-04, Vol.4 (4), p.45002

2017

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Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

IOP conference series. Materials Science and Engineering, 2017-10, Vol.256 (1), p.12005

2017

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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

Journal of luminescence, 2014-03, Vol.147, p.59-62

2014

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Impurity defect absorption and photochromic effect in KNbWO6

Journal of solid state chemistry, 2021-06, Vol.298, p.122099, Article 122099

2021

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Photoelectric spectroscopy of InAs/GaAs quantum dot structures in a semiconductor/electrolyte system

Nanotechnology, 2002-08, Vol.13 (4), p.445-450

2002

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Structure, optical absorption and photochromic effect in Rb0.95Nb1.375Mo0.625O5.79

Journal of solid state chemistry, 2022-06, Vol.310, p.123083, Article 123083

2022

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A family of effective features for condition diagnostics of complex technical systems from the example of GTE transmission bearings

Pattern recognition and image analysis, 2009-12, Vol.19 (4), p.641-646

2009

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Synthesis, structure, and properties of new Dion-Jacobson compounds A’LnNaNb3O10 (A’ = Cs, Rb, H; Ln = Nd, Pr)

The Journal of physics and chemistry of solids, 2021-09, Vol.156, p.110184, Article 110184

2021

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Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy

JETP letters, 2014-10, Vol.100 (3), p.156-161

2014

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Plasmon resonance induced photoconductivity of ZrO 2 (Y) films with embedded Au nanoparticles

Journal of physics. Conference series, 2017-03, Vol.816, p.12010

2017

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Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1592-1595

2015

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Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

Semiconductors (Woodbury, N.Y.), 2015-10, Vol.49 (10), p.1365-1368

2015

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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

Journal of luminescence, 2014, Vol.147, p.59-62

2014

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Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

Semiconductors (Woodbury, N.Y.), 2015-03, Vol.49 (3), p.387-393

2015

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Analysis of Glycine max and Galega orientalis Nodules Revealed Specific Features of Symbiotic Interface Organization in Determinate and Indeterminate Nodules

Effect of Elevated Temperature on Premature Senescence in Nodules of Pea (Pisum sativum L.) sym26 and sym27 Mutants. II. Ultrastructural Organization

Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles

Influence of neutron irradiation on optoelectronic properties of structures with the InAs/GaAs quantum dots

New Mineral-Like Gd- and B-Containing Compounds for Neutron Capture Therapy

Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters

Plasmon resonance induced photoconductivity of ZrO2(Y) films with embedded Au nanoparticles

Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers

Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

Temperature-dependent efficiency of the carrier emission from InAs/GaAs quantum dots

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

Impurity defect absorption and photochromic effect in KNbWO6

Photoelectric spectroscopy of InAs/GaAs quantum dot structures in a semiconductor/electrolyte system

Structure, optical absorption and photochromic effect in Rb0.95Nb1.375Mo0.625O5.79

A family of effective features for condition diagnostics of complex technical systems from the example of GTE transmission bearings

Synthesis, structure, and properties of new Dion-Jacobson compounds A’LnNaNb3O10 (A’ = Cs, Rb, H; Ln = Nd, Pr)

Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy

Plasmon resonance induced photoconductivity of ZrO 2 (Y) films with embedded Au nanoparticles

Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique

Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

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