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Determination of the resistance of fabric printed with triclosan microcapsules to the action of soil micro-flora

IOP conference series. Materials Science and Engineering, 2017-10, Vol.254 (12), p.122004

2017

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Broad bandwidth transformer coupled differential amplifiers for high dynamic range

IEEE journal of solid-state circuits, 1999-09, Vol.34 (9), p.1233-1238

1999

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IEEE_Xplore

High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

IEEE transactions on microwave theory and techniques, 1994-12, Vol.42 (12), p.2590-2597

1994

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IEEE_Xplore

Comparison of Ar-, O-, and Cl-ion implant-damage gettering of gold from silicon using metal oxide silicon techniques

Journal of applied physics, 1982-09, Vol.53 (9), p.6168-6173

1982

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The platinum doped MOST: A memory storage element

IEEE transactions on electron devices, 1981-09, Vol.28 (9), p.1014-1017

1981

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IEEE_Xplore

Lifetime in ion implant damage gettered silicon by MOS voltage ramping

IEEE transactions on electron devices, 1979-03, Vol.26 (3), p.245-246

1979

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IEEE_Xplore

Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering

Solid-state electronics, 1980-01, Vol.23 (12), p.1249-1254

1980

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A coplanar-to-microstrip transition for W-band circuit fabrication with 100- mu m-thick GaAs wafers

IEEE microwave and guided wave letters, 1993-02, Vol.3 (2), p.29-31, Article 1272

1993

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IEEE_Xplore

Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

Nuclear instruments and methods in physics research, , Vol.191 (1), p.63-69

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Compact high gain W-band and V-band pseudomorphic HEMT MMIC power amplifiers

Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994, p.33-36

1994

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IEEE_Xplore

Annealing of SiSiO 2 interface states using Ar-ion-implant-damage-gettering

Solid-state electronics, 1980, Vol.23 (12), p.1249-1254

1980

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C-V hysteresis in metal-oxide-semiconductor structures resulting from Pt doping of the gate oxide

Journal of applied physics, 1984-01, Vol.56 (10), p.3014-3017

1984

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Effect of Eu3+ ion concentration on the structural and photoluminescence properties of Ba1.3Ca0.7SiO4 ceramic-based red phosphors for solid-state lighting applications

Journal of alloys and compounds, 2020-06, Vol.827, p.154216, Article 154216

2020

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Trivalent rare-earth-codoped silicate phosphor materials (Ba1.3Ca0.7−x−y SiO4: xDy3+/yEu3+) for solid-state lighting

Journal of physics. Condensed matter, 2022-05, Vol.34 (29), p.294006

2022

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A review of nitrogen trifluoride for dry etching in microelectronics processing

Microelectronics, 1985, Vol.16 (1), p.5-21

1985

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Implant gettering and ion beam detection of generation impurities in silicon

Microelectronics, 1982, Vol.13 (6), p.23-28

1982

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On-Wafer Characterization of CPW Step Discontinuities by a One-Port Method

36th ARFTG Conference Digest, 1990, Vol.18, p.152-160

1990

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Single-Phase Silicate Phosphors (Ba1.3Ca0.7−xSiO4:xDy3+) Doped with Dysprosium for White Solid-State Lighting

Advances in condensed matter physics, 2022-05, Vol.2022, p.1-11

2022

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MM-wave MIMIC receiver components

IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1991, p.51-54

1991

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IEEE_Xplore

Combustion Synthesis of Nanocrystalline Ba1.3Ca0.7SiO4 Semiconductors Using Urea as an Energy Efficient Fuel

Inorganics, 2023-02, Vol.11 (2), p.48

2023

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High gain monolithic p-HEMT W-band four-stage low noise amplifiers

Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994, p.29-32

1994

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IEEE_Xplore

Photoluminescence processes in τ -phase Ba 1.3 Ca 0.7- x - y SiO 4 : x D y 3+ / y Tb 3+ phosphors for solid-state lighting

Royal Society open science, 2022-06, Vol.9 (6), p.220101

2022

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Photoluminescence processes in τ-phase Ba1.3Ca0.7-x-ySiO4:xDy3+/yTb3+ phosphors for solid-state lighting

Royal Society open science, 2022-06, Vol.9 (6)

2022

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Photoluminescence processes in τ-phase Ba1.3Ca0.7-x-y SiO4:xDy 3+/yTb3+ phosphors for solid-state lighting

Royal Society open science, 2022-06, Vol.9 (6), p.220101-220101

2022

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Combustion Synthesis of Nanocrystalline Ba[sub.1.3]Ca[sub.0.7]SiO[sub.4] Semiconductors Using Urea as an Energy Efficient Fuel

Inorganics, 2023-01, Vol.11 (2)

2023

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Determination of the resistance of fabric printed with triclosan microcapsules to the action of soil micro-flora

Broad bandwidth transformer coupled differential amplifiers for high dynamic range

High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

Comparison of Ar-, O-, and Cl-ion implant-damage gettering of gold from silicon using metal oxide silicon techniques

The platinum doped MOST: A memory storage element

Lifetime in ion implant damage gettered silicon by MOS voltage ramping

Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering

A coplanar-to-microstrip transition for W-band circuit fabrication with 100- mu m-thick GaAs wafers

Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry

Compact high gain W-band and V-band pseudomorphic HEMT MMIC power amplifiers

Annealing of SiSiO 2 interface states using Ar-ion-implant-damage-gettering

C-V hysteresis in metal-oxide-semiconductor structures resulting from Pt doping of the gate oxide

Effect of Eu3+ ion concentration on the structural and photoluminescence properties of Ba1.3Ca0.7SiO4 ceramic-based red phosphors for solid-state lighting applications

Trivalent rare-earth-codoped silicate phosphor materials (Ba1.3Ca0.7−x−y SiO4: xDy3+/yEu3+) for solid-state lighting

A review of nitrogen trifluoride for dry etching in microelectronics processing

Implant gettering and ion beam detection of generation impurities in silicon

On-Wafer Characterization of CPW Step Discontinuities by a One-Port Method

Single-Phase Silicate Phosphors (Ba1.3Ca0.7−xSiO4:xDy3+) Doped with Dysprosium for White Solid-State Lighting

MM-wave MIMIC receiver components

Combustion Synthesis of Nanocrystalline Ba1.3Ca0.7SiO4 Semiconductors Using Urea as an Energy Efficient Fuel

High gain monolithic p-HEMT W-band four-stage low noise amplifiers

Photoluminescence processes in τ -phase Ba 1.3 Ca 0.7- x - y SiO 4 : x D y 3+ / y Tb 3+ phosphors for solid-state lighting

Photoluminescence processes in τ-phase Ba1.3Ca0.7-x-ySiO4:xDy3+/yTb3+ phosphors for solid-state lighting

Photoluminescence processes in τ-phase Ba1.3Ca0.7-x-y SiO4:xDy 3+/yTb3+ phosphors for solid-state lighting

Combustion Synthesis of Nanocrystalline Ba[sub.1.3]Ca[sub.0.7]SiO[sub.4] Semiconductors Using Urea as an Energy Efficient Fuel

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