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Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition

Journal of applied physics, 2008-12, Vol.104 (11)

2008

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Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (⩽x⩽1) and germanium diffusion in silicon

Journal of applied physics, 2007-10, Vol.102 (7)

2007

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Scalable normally-off MIS-HEMT using fluorine implantation below the channel

2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion, 2014, p.124-127

2014

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Hardware-In-the-Loop Simulation of a High Frequency Interleaved Converter based on a Low-Cost FPGA Platform

IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society, 2022, p.1-6

2022

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Verification of GaN-HEMT Spice Models Using an S-parameters Approach

2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 2022, p.01-10

2022

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Detailed investigation of Ge-Si interdiffusion in the full range of Si 1 − x Ge x ( 0 ≤ x ≤ 1 ) composition

Journal of applied physics, 2008-12, Vol.104 (11), p.113524-113524-7

2008

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Study of silicon–germanium interdiffusion from pure germanium deposited layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.110-113

2008

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Detection of Cs 2 Ge + clusters for the quantification of germanium atomsby secondary ion mass spectrometry: Application to the characterizationof Si 1 − x Ge x layers ( 0 ⩽ x ⩽ 1 ) and germanium diffusion in silicon

Journal of applied physics, 2007-10, Vol.102 (7), p.074904-074904-6

2007

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Safe operation of a totem-pole PFC converter using depletion-mode GaN HEMTs

2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), 2021, p.1-8

2021

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Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs

2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), 2020, p.181-184

2020

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Detection of Cs{sub 2}Ge{sup +} clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si{sub 1-x}Ge{sub x} layers (0{<=}x{<=}1) and germanium diffusion in silicon

Journal of applied physics, 2007-10, Vol.102 (7)

2007

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A 1.5-kW totem-pole PFC converter using D-mode (normally-on) GaN HEMTs

2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS), 2019, p.1-5

2019

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Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon

MRS proceedings, 2008, Vol.1070, Article 1070-E01-02

2008

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Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe), 2016, p.1-6

2016

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A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer

2013 15th European Conference on Power Electronics and Applications (EPE), 2013, p.1-6

2013

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P-doped region below the AlGaN/GaN interface for normally-off HEMT

2014 16th European Conference on Power Electronics and Applications, 2014, p.1-8

2014

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Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition

Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (⩽x⩽1) and germanium diffusion in silicon

Scalable normally-off MIS-HEMT using fluorine implantation below the channel

Hardware-In-the-Loop Simulation of a High Frequency Interleaved Converter based on a Low-Cost FPGA Platform

Verification of GaN-HEMT Spice Models Using an S-parameters Approach

Detailed investigation of Ge-Si interdiffusion in the full range of Si 1 − x Ge x ( 0 ≤ x ≤ 1 ) composition

Study of silicon–germanium interdiffusion from pure germanium deposited layers

Detection of Cs 2 Ge + clusters for the quantification of germanium atomsby secondary ion mass spectrometry: Application to the characterizationof Si 1 − x Ge x layers ( 0 ⩽ x ⩽ 1 ) and germanium diffusion in silicon

Safe operation of a totem-pole PFC converter using depletion-mode GaN HEMTs

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs

Detection of Cs{sub 2}Ge{sup +} clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si{sub 1-x}Ge{sub x} layers (0{<=}x{<=}1) and germanium diffusion in silicon

A 1.5-kW totem-pole PFC converter using D-mode (normally-on) GaN HEMTs

Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon

Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer

P-doped region below the AlGaN/GaN interface for normally-off HEMT

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