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Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3

Nature communications, 2019-02, Vol.10 (1), p.607-607, Article 607

2019

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Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band

Nature materials, 2012-02, Vol.11 (5), p.444-449

2012

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Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor

Nature materials, 2005-06, Vol.4 (6), p.447-449

2005

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Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses

Physical review letters, 2010-09, Vol.105 (11), p.117204-117204, Article 117204

2010

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Temperature-induced antiferromagnetic interlayer exchange coupling in (Ga,Mn)(As,P)-based trilayer structure

Journal of applied physics, 2020-05, Vol.127 (18)

2020

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GaMnAs-based hybrid multiferroic memory device

Applied physics letters, 2008-05, Vol.92 (19), p.192501-192501-3

2008

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Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

npj quantum materials, 2022-04, Vol.7 (1), p.1-7, Article 46

2022

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Ultrafast enhancement of ferromagnetism via photoexcited holes in GaMnAs

Physical review letters, 2007-05, Vol.98 (21), p.217401-217401, Article 217401

2007

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Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Scientific reports, 2018-02, Vol.8 (1), p.2288-9, Article 2288

2018

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Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Journal of crystal growth, 2011-05, Vol.323 (1), p.127-131

2011

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Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Scientific reports, 2015-12, Vol.5 (1), p.17761-17761, Article 17761

2015

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Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi 2 Se 3

Nature communications, 2019-12, Vol.10 (1), p.607

2019

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Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films

Physical review letters, 2007-01, Vol.98 (4), p.047201-047201, Article 047201

2007

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Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (1 0 0) substrates

Journal of crystal growth, 2011-09, Vol.330 (1), p.30-34

2011

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Magnetic depth profile in GaMnAs layers with vertically graded Mn concentrations

Journal of magnetism and magnetic materials, 2014-01, Vol.350, p.135-140

2014

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Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor

Physical review letters, 2005-11, Vol.95 (22), p.227203.1-227203.4, Article 227203

2005

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Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Journal of crystal growth, 2013-09, Vol.378, p.337-341

2013

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Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor

Nature materials, 2005-06, Vol.4 (6), p.447-449

2005

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Planar Hall effect in a single GaMnAs film grown on Si substrate

Journal of crystal growth, 2013-09, Vol.378, p.361-364

2013

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Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Applied physics letters, 2009-03, Vol.94 (11), p.111910-111910-3

2009

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Effects of pressure on photo-induced formation of Se and Te clusters in II-VI compounds

Physica Status Solidi. B: Basic Solid State Physics, 2013-04, Vol.250 (4), p.711-715

2013

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Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor

Current Applied Physics, 2014, 14(12), , pp.1775-1778

2014

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Diluted magnetic semiconductors

Journal of applied physics, 1988-08, Vol.64 (4), p.R29-R64

FURDYNA, J. K

1988

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Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films

Journal of applied physics, 2005-09, Vol.98 (6)

2005

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MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

Journal of crystal growth, 2009-03, Vol.311 (7), p.2116-2119

2009

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Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi2Se3

Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band

Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor

Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses

Temperature-induced antiferromagnetic interlayer exchange coupling in (Ga,Mn)(As,P)-based trilayer structure

GaMnAs-based hybrid multiferroic memory device

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Ultrafast enhancement of ferromagnetism via photoexcited holes in GaMnAs

Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film

Ultrafast manipulation of topologically enhanced surface transport driven by mid-infrared and terahertz pulses in Bi 2 Se 3

Stable multidomain structures formed in the process of magnetization reversal in GaMnAs ferromagnetic semiconductor thin films

Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (1 0 0) substrates

Magnetic depth profile in GaMnAs layers with vertically graded Mn concentrations

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

Pressure-induced ferromagnetism in (In,Mn)Sb dilute magnetic semiconductor

Planar Hall effect in a single GaMnAs film grown on Si substrate

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Effects of pressure on photo-induced formation of Se and Te clusters in II-VI compounds

Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor

Diluted magnetic semiconductors

Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga1−xMnxAs films

MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

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