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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.2926-2931

2006

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Potential performance of indium-nitride-based devices

Applied physics letters, 2006-04, Vol.88 (15), p.152113-152113-3

2006

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Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

Journal of materials science. Materials in electronics, 2006-02, Vol.17 (2), p.87-126

2006

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Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

Applied physics letters, 2005-11, Vol.87 (22), p.222103-222103-3

2005

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Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1234-1248

2010

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IEEE_Xplore

Correlation Between AlGaN/GaN MISHFET Performance and \hbox Insulation Layer Quality

IEEE electron device letters, 2011-03, Vol.32 (3), p.312-314

2011

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IEEE_Xplore

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Journal of physics. Condensed matter, 2009-04, Vol.21 (17), p.174208-174208

2009

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Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Journal of crystal growth, 2004-08, Vol.269 (1), p.29-34

2004

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Surface charge accumulation of InN films grown by molecular-beam epitaxy

Applied physics letters, 2003-03, Vol.82 (11), p.1736-1738

2003

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Comparison of GaN HEMTs on Diamond and SiC Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.948-950

2007

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IEEE_Xplore

Correlation Between AlGaN/GaN MISHFET Performance and HfO2 Insulation Layer Quality

IEEE electron device letters, 2011-03, Vol.32 (3), p.312-314

2011

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Surface chemical modification of InN for sensor applications

Journal of applied physics, 2004-09, Vol.96 (6), p.3577-3579

2004

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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

IEEE electron device letters, 2000-06, Vol.21 (6), p.268-270

2000

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IEEE_Xplore

Transient electron transport in wurtzite GaN, InN, and AlN

Journal of applied physics, 1999-06, Vol.85 (11), p.7727-7734

1999

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A THz-range planar NDR device utilizing ballistic electron acceleration in GaN

Solid-state electronics, 2011-10, Vol.64 (1), p.57-62

2011

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Electrical properties of InGaN grown by molecular beam epitaxy

Physica Status Solidi (b), 2008-05, Vol.245 (5), p.868-872

2008

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Steady-state and transient electron transport within bulk wurtzite zinc oxide

Solid state communications, 2010-11, Vol.150 (43), p.2182-2185

2010

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Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Applied physics letters, 2001-09, Vol.79 (10), p.1489-1491

2001

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Scattering of electrons at threading dislocations in GaN

Journal of applied physics, 1998-04, Vol.83 (7), p.3656-3659

1998

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The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient

Solid state communications, 2011-06, Vol.151 (12), p.874-878

2011

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The polarization-induced electron gas in a heterostructure

Semiconductor science and technology, 2000-03, Vol.15 (3), p.270-271

2000

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Improvement on epitaxial grown of InN by migration enhanced epitaxy

Applied physics letters, 2000-10, Vol.77 (16), p.2548-2550

2000

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Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs

IEEE electron device letters, 2011-07, Vol.32 (7), p.889-891

2011

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Electron transport in wurtzite indium nitride

Journal of applied physics, 1998-01, Vol.83 (2), p.826-829

1998

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The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

Journal of materials science. Materials in electronics, 2010-03, Vol.21 (3), p.218-230

2010

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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

Potential performance of indium-nitride-based devices

Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Correlation Between AlGaN/GaN MISHFET Performance and \hbox Insulation Layer Quality

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Surface charge accumulation of InN films grown by molecular-beam epitaxy

Comparison of GaN HEMTs on Diamond and SiC Substrates

Correlation Between AlGaN/GaN MISHFET Performance and HfO2 Insulation Layer Quality

Surface chemical modification of InN for sensor applications

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

Transient electron transport in wurtzite GaN, InN, and AlN

A THz-range planar NDR device utilizing ballistic electron acceleration in GaN

Electrical properties of InGaN grown by molecular beam epitaxy

Steady-state and transient electron transport within bulk wurtzite zinc oxide

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Scattering of electrons at threading dislocations in GaN

The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient

The polarization-induced electron gas in a heterostructure

Improvement on epitaxial grown of InN by migration enhanced epitaxy

Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs

Electron transport in wurtzite indium nitride

The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis

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