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Topical Drifts in Intelligent Computing: Proceedings of International Conference on Computational Techniques and Applications (ICCTA 2021)

1, 2022

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The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (23), p.3008

2023

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Exploration of effects of gate underlap in HOI FinFETs at 10 nm gate length

Physica scripta, 2023-07, Vol.98 (7), p.74003

2023

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Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Scientific reports, 2024-02, Vol.14 (1), p.2902-2902, Article 2902

2024

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Design of DG MOSFET with Tri-Layered Strained Silicon Channel

Journal of physics. Conference series, 2020-04, Vol.1478 (1), p.12002

2020

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Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances

Scientific reports, 2023-07, Vol.13 (1), p.11415-11415, Article 11415

2023

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Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

Micromachines (Basel), 2023-06, Vol.14 (6), p.1226

2023

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Design and Exploration by Quantum Chemical Analysis of Photosensitizers Having [D−π–π–A]- and [D-D-triad-A]-Type Molecular Structure Models for DSSC

ACS omega, 2024-03, Vol.9 (10), p.11471-11477

2024

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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1662

2023

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Photonics, 2023-07, Vol.10 (7), p.800

2023

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Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs

Physica scripta, 2021-12, Vol.96 (12), p.124006

2021

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Fabrication and analysis of emerging electrochromic nanomaterial membrane device for smart applications

Journal of materials science. Materials in electronics, 2022-11, Vol.33 (31), p.23937-23948

2022

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Development of Tri‐Layered s‐Si/s‐SiGe/s‐Si Channel Heterostructure‐on‐Insulator MOSFET for Enhanced Drive Current

physica status solidi (b), 2018-08, Vol.255 (8), p.n/a

2018

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Exploration and development of tri-gate quantum well barrier FinFET with strained nanosystem channel for enhanced performance

Computers & electrical engineering, 2022-03, Vol.98, p.107687, Article 107687

2022

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Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length

Sadhana (Bangalore), 2023-12, Vol.49 (1), Article 11

2023

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Electrical scanning probe microscopy of electronic and photonic devices: connecting internal mechanisms with external measures

Nanotechnology reviews (Berlin), 2016-06, Vol.5 (3), p.279-300

2016

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Micro-features of ambipolar snapback behaviour under high current injection to design capacitorless memory device

Physica scripta, 2021-12, Vol.96 (12), p.124069

2021

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Performance evaluation of split high–K material based stacked hetero-dielectrics tunnel FET

Physica scripta, 2023-12, Vol.98 (12), p.124002

2023

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Measuring the exciton diffusion length of C60 in organic planar heterojunction solar cells

Physica status solidi. A, Applications and materials science, 2011-08, Vol.208 (8), p.1967-1971

2011

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Defects detection in dentistry: designing a graphene multi-layered based plasmonic sensor

Physica scripta, 2023-06, Vol.98 (6), p.65605

2023

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Comparative performance analysis based short channel effects for TG Nano FinFETs

Journal of physics. Conference series, 2021-05, Vol.1921 (1), p.12014

2021

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Performance analysis and development of strain induced quantum well based nano-system device technology

Microsystem technologies : sensors, actuators, systems integration, 2021-10, Vol.27 (10), p.3703-3710

2021

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Physics & Modeling of Ambipolar Snapback Behavior in Gate Grounded NMOS

SILICON, 2022-05, Vol.14 (7), p.3221-3231

2022

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Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG- NanoFET

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 2020, p.1-4

2020

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Advances in controller design of pacemakers for pacing control: A comprehensive review

Annual reviews in control, 2024, Vol.57, p.100930, Article 100930

2024

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Topical Drifts in Intelligent Computing: Proceedings of International Conference on Computational Techniques and Applications (ICCTA 2021)

The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length

Exploration of effects of gate underlap in HOI FinFETs at 10 nm gate length

Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Design of DG MOSFET with Tri-Layered Strained Silicon Channel

Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances

Development and Analysis of Graphene-Sheet-Based GaAs Schottky Solar Cell for Enriched Efficiency

Design and Exploration by Quantum Chemical Analysis of Photosensitizers Having [D−π–π–A]- and [D-D-triad-A]-Type Molecular Structure Models for DSSC

Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs

Fabrication and analysis of emerging electrochromic nanomaterial membrane device for smart applications

Development of Tri‐Layered s‐Si/s‐SiGe/s‐Si Channel Heterostructure‐on‐Insulator MOSFET for Enhanced Drive Current

Exploration and development of tri-gate quantum well barrier FinFET with strained nanosystem channel for enhanced performance

Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length

Electrical scanning probe microscopy of electronic and photonic devices: connecting internal mechanisms with external measures

Micro-features of ambipolar snapback behaviour under high current injection to design capacitorless memory device

Performance evaluation of split high–K material based stacked hetero-dielectrics tunnel FET

Measuring the exciton diffusion length of C60 in organic planar heterojunction solar cells

Defects detection in dentistry: designing a graphene multi-layered based plasmonic sensor

Comparative performance analysis based short channel effects for TG Nano FinFETs

Performance analysis and development of strain induced quantum well based nano-system device technology

Physics & Modeling of Ambipolar Snapback Behavior in Gate Grounded NMOS

Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG- NanoFET

Advances in controller design of pacemakers for pacing control: A comprehensive review

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