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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016, p.1-2

2016

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Short wavelength ([lamda] = 3.5-3.65 µm) InAs/AlSb quantum cascade lasers

Electronics letters, 2006-10, Vol.42 (22), p.1-1

2006

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Optically tunable metamaterials on lattice-matched InGaAs/InP

The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, 2015, p.1-1

2015

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Giant intersubband polariton splitting in InAs/AlSb microcavities

Solid state communications, 2007-05, Vol.142 (6), p.311-313

2007

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Short wavelength (λ1 = 3.5-3.65 μm) InAs/AISb quantum cascade lasers

Electronics letters, 2006, Vol.42 (22), p.1284-1286

2006

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Relaxation and dephasing of the intersubband transitions in n -type In As ∕ Al Sb multi quantum wells

Applied physics letters, 2007-08, Vol.91 (7), p.071918-071918-3

2007

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Direct bandgap dependence of bismuth films on their thickness

Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

Quantum cascade lasers emitting near 2.6 μ m

Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers

Very short wavelength ( λ = 3.1 - 3.3 μ m ) quantum cascade lasers

High temperature operation of λ ≈ 3.3 μ m quantum cascade lasers

Modulation of terahertz radiation using optical control of Fabry–Perot resonances

InAs-based distributed feedback quantum cascade lasers

InAsP AlGaInP GaAs QD laser operating at ∼770 nm

Influence of the material parameters on quantum cascade devices

In As ∕ Al Sb quantum cascade lasers emitting at 2.75 - 2.97 μ m

In As ∕ Al Sb quantum cascade lasers emitting below 3 μ m

InAs/AlSb quantum cascade lasers emitting below 3 μm

Formation and investigation of p-n diode structures based on lanthanum manganites and Nb-doped SrTiO3

Short wavelength (=3.5–3.65 [micro sign]m) InAs/AlSb quantum cascade lasers

InAs-based distributed feedback quantum cascade lasers

Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

High temperature operation of λ≈3.3μm quantum cascade lasers

Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells

Growth and characterisation of InAsP/AlGaInP QD laser structures

Short wavelength ([lamda] = 3.5-3.65 µm) InAs/AlSb quantum cascade lasers

Optically tunable metamaterials on lattice-matched InGaAs/InP

Giant intersubband polariton splitting in InAs/AlSb microcavities

Short wavelength (λ1 = 3.5-3.65 μm) InAs/AISb quantum cascade lasers

Relaxation and dephasing of the intersubband transitions in n -type In As ∕ Al Sb multi quantum wells

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