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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2020-06, Vol.49 (6), p.3455-3464

2020

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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Journal of electronic materials, 2021-06, Vol.50 (6), p.3258-3265

2021

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Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Materials science forum, 2020-07, Vol.1004, p.393-400

2020

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Prismatic Slip in PVT-Grown 4H-SiC Crystals

Journal of electronic materials, 2017-04, Vol.46 (4), p.2040-2044

2017

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1910-1923

2010

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Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

Materials science forum, 2020-07, Vol.1004, p.37-43

2020

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Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Materials science forum, 2020-07, Vol.1004, p.44-50

2020

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Impact of Subsurface Damage on SiC Wafer Shape

Materials science forum, 2019-07, Vol.963, p.530-533

2019

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Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Applied physics letters, 2000-11, Vol.77 (22), p.3601-3603

2000

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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IEEE_Xplore

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

Materials science forum, 2019-07, Vol.963, p.60-63

2019

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Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Materials science forum, 2016-05, Vol.858, p.129-132

2016

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Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582

2003

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Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

Journal of applied physics, 2007-05, Vol.101 (9), p.093506-093506-7

2007

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

Solid-state electronics, 2002-12, Vol.46 (12), p.2231-2235

2002

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The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO)2) interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

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Effect of process variations and ambient temperature on electron mobility at the SiO(2)/4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582-1588

2003

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A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers

Journal of electronic materials, 2005-10, Vol.34 (10), p.1342-1348

2005

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The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO sub(2) interface

IEEE transactions on nuclear science, 2001-01, Vol.48 (6)

2001

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Effect of process variations and ambient temperature on electron mobility at the SiO sub(2)/4H-SiC interface

IEEE transactions on electron devices, 2003-01, Vol.50 (7)

2003

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SiC Substrate Doping Profiles Using Commercial Optical Scanners

Materials science forum, 2006-01, Vol.527-529, p.725-728

2006

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Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1582-1588

2003

Link zum Volltext
IEEE_Xplore

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2229-2232

2001

Link zum Volltext
IEEE_Xplore

The effects of NO passivation on the radiation response of SiO 2/4H-SiC MOS capacitors

Solid-state electronics, 2002, Vol.46 (12), p.2231-2235

2002

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Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

Prismatic Slip in PVT-Grown 4H-SiC Crystals

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Impact of Subsurface Damage on SiC Wafer Shape

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

Free carrier distribution profiling of 4H-SiC substrates using a commercial optical scanner

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO2 interface

The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors

The effects of high-dose gamma irradiation on high-voltage 4H-SiCSchottky diodes and the SiC-SiO)2) interface

Effect of process variations and ambient temperature on electron mobility at the SiO(2)/4H-SiC interface

A comparative study of micropipe decoration and counting in conductive and semi-insulating silicon carbide wafers

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO sub(2) interface

Effect of process variations and ambient temperature on electron mobility at the SiO sub(2)/4H-SiC interface

SiC Substrate Doping Profiles Using Commercial Optical Scanners

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface

The effects of NO passivation on the radiation response of SiO 2/4H-SiC MOS capacitors

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