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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

ACS applied materials & interfaces, 2018-05, Vol.10 (20), p.17419-17426

2018

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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE transactions on power electronics, 2017-08, Vol.32 (8), p.6416-6433

2017

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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE transactions on power electronics, 2017-07, Vol.32 (7), p.5539-5549

2017

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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

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Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

IEEE electron device letters, 2012-08, Vol.33 (8), p.1132-1134

2012

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Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Advanced materials (Weinheim), 2023-03, Vol.35 (12), p.e2208960-n/a

2023

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Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

IEEE electron device letters, 2011-04, Vol.32 (4), p.482-484

2011

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GaN power IC technology on p -GaN gate HEMT platform

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SG0801

2020

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Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2469-2473

2016

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Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Jpn J Appl Phys, 2011-11, Vol.50 (11), p.110202-110202-3

2011

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Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

Scientific reports, 2022-07, Vol.12 (1), p.12053-12053, Article 12053

2022

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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE electron device letters, 2016-12, Vol.37 (12), p.1617-1620

2016

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Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2785-2792

2014

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Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

IEEE electron device letters, 2015-12, Vol.36 (12), p.1287-1290

2015

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Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

IEEE electron device letters, 2011-03, Vol.32 (3), p.303-305

2011

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A Stub Tapped Branch-Line Coupler for Dual-Band Operations

IEEE microwave and wireless components letters, 2007-02, Vol.17 (2), p.106-108

2007

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AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74015

2013

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O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-01, Vol.106 (3)

2015

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Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1492-1496

2010

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Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Applied physics letters, 2014-01, Vol.104 (1)

2014

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GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics

IEEE electron device letters, 2011-01, Vol.32 (1), p.27-29

2011

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Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

IEEE electron device letters, 2018-01, Vol.39 (1), p.59-62

2018

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GaN-on-Si Power Technology: Devices and Applications

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

GaN power IC technology on p -GaN gate HEMT platform

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Normally Off AlGaN/GaN Metal-2DEG Tunnel-Junction Field-Effect Transistors

A Stub Tapped Branch-Line Coupler for Dual-Band Operations

AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

GaN Single-Polarity Power Supply Bootstrapped Comparator for High-Temperature Electronics

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

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