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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE transactions on power electronics, 2017-07, Vol.32 (7), p.5539-5549

2017

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GaN power IC technology on p -GaN gate HEMT platform

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SG0801

2020

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Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Jpn J Appl Phys, 2011-11, Vol.50 (11), p.110202-110202-3

2011

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Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

Scientific reports, 2022-07, Vol.12 (1), p.12053-12053, Article 12053

2022

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O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-01, Vol.106 (3)

2015

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Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Applied physics letters, 2015-03, Vol.106 (9)

2015

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Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Applied physics letters, 2014-01, Vol.104 (1)

2014

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Approaching precision public health by automated syndromic surveillance in communities

PloS one, 2021-08, Vol.16 (8), p.e0254479-e0254479

2021

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Evaluating the Effectiveness of School Closure in COVID-19-Related Syndromes From Community-Based Syndromic Surveillance: Longitudinal Observational Study

Interactive journal of medical research, 2023-12, Vol.12, p.e44606-e44606

2023

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P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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High } and } / } Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform

IEEE electron device letters, 2020-01, Vol.41 (1), p.26-29

2020

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Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Physica status solidi. C, 2013-11, Vol.10 (11), p.1397-1400

2013

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Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Applied physics letters, 2014-12, Vol.105 (22)

2014

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ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2011-12, Vol.110 (11), p.114514-114514-7

2011

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Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

IEEE electron device letters, , Vol.40 (4), p.526-529

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Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Applied physics letters, 2022-04, Vol.120 (15)

2022

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Rational Design of Calpain Inhibitors Based on Calpastatin Peptidomimetics

Journal of medicinal chemistry, 2016-06, Vol.59 (11), p.5403-5415

2016

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The 2018 GaN power electronics roadmap

Journal of physics. D, Applied physics, 2018-04, Vol.51 (16), p.163001

2018

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High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration

IEEE electron device letters, , Vol.39 (9), p.1362-1365

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Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

IEEE electron device letters, 2023-11, Vol.44 (11), p.1813-1816

2023

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GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

IEEE electron device letters, 2022-05, Vol.43 (5), p.697-700

2022

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Dislocation of the metacarpophalangeal joint of the index finger requiring open reduction due to the presence of an intra-articular sesamoid bone

SAGE open medical case reports, 2021-06, Vol.9, p.2050313

2021

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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

GaN power IC technology on p -GaN gate HEMT platform

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Approaching precision public health by automated syndromic surveillance in communities

Evaluating the Effectiveness of School Closure in COVID-19-Related Syndromes From Community-Based Syndromic Surveillance: Longitudinal Observational Study

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

High } and } / } Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform

Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform

Rational Design of Calpain Inhibitors Based on Calpastatin Peptidomimetics

The 2018 GaN power electronics roadmap

High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration

Metastatic pancreatic neuroendocrine tumors feature elevated T cell infiltration

Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

Dislocation of the metacarpophalangeal joint of the index finger requiring open reduction due to the presence of an intra-articular sesamoid bone

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