UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 4.074

Sortiert nach

GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

Link zum Volltext
Volltext

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

ACS applied materials & interfaces, 2018-05, Vol.10 (20), p.17419-17426

2018

Link zum Volltext

Verfügbarkeit prüfen

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE transactions on power electronics, 2017-08, Vol.32 (8), p.6416-6433

2017

Link zum Volltext
Volltext

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE transactions on power electronics, 2017-07, Vol.32 (7), p.5539-5549

2017

Link zum Volltext
Volltext

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

Advanced materials (Weinheim), 2023-03, Vol.35 (12), p.e2208960-n/a

2023

Link zum Volltext

Verfügbarkeit prüfen

GaN power IC technology on p -GaN gate HEMT platform

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SG0801

2020

Link zum Volltext

Verfügbarkeit prüfen

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2469-2473

2016

Link zum Volltext
Volltext

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Jpn J Appl Phys, 2011-11, Vol.50 (11), p.110202-110202-3

2011

Link zum Volltext

Verfügbarkeit prüfen

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Journal of applied physics, 2022-10, Vol.132 (13)

2022

Link zum Volltext

Verfügbarkeit prüfen

Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

Scientific reports, 2022-07, Vol.12 (1), p.12053-12053, Article 12053

2022

Link zum Volltext

Verfügbarkeit prüfen

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2785-2792

2014

Link zum Volltext
Volltext

A Stub Tapped Branch-Line Coupler for Dual-Band Operations

IEEE microwave and wireless components letters, 2007-02, Vol.17 (2), p.106-108

2007

Link zum Volltext
Volltext

AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74015

2013

Link zum Volltext

Verfügbarkeit prüfen

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-01, Vol.106 (3)

2015

Link zum Volltext

Verfügbarkeit prüfen

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

IEEE transactions on electron devices, 2010-07, Vol.57 (7), p.1492-1496

2010

Link zum Volltext
Volltext

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Applied physics letters, 2015-03, Vol.106 (9)

2015

Link zum Volltext

Verfügbarkeit prüfen

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Applied physics letters, 2014-01, Vol.104 (1)

2014

Link zum Volltext

Verfügbarkeit prüfen

Approaching precision public health by automated syndromic surveillance in communities

PloS one, 2021-08, Vol.16 (8), p.e0254479-e0254479

2021

Link zum Volltext

Verfügbarkeit prüfen

Trapping mechanisms in insulated‐gate GaN power devices: Understanding and characterization techniques

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

Link zum Volltext

Verfügbarkeit prüfen

Evaluating the Effectiveness of School Closure in COVID-19-Related Syndromes From Community-Based Syndromic Surveillance: Longitudinal Observational Study

Interactive journal of medical research, 2023-12, Vol.12, p.e44606-e44606

2023

Link zum Volltext

Verfügbarkeit prüfen

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1059-1065

2015

Link zum Volltext

Verfügbarkeit prüfen

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Applied physics letters, 2014-07, Vol.105 (3)

2014

Link zum Volltext

Verfügbarkeit prüfen

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1075-1081

2013

Link zum Volltext
Volltext

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

Link zum Volltext

Verfügbarkeit prüfen

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

AIP advances, 2022-04, Vol.12 (4), p.045125-045125-5

2022

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 4.074

Suche als RSS-Feed

Aktive Filter

Zeitschrift / SerieIeee Electron Device Letters

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(3.621)
Mit Volltextzugriff
(3.688)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(2.883)
Life Sciences & Biomedicine
(1.855)
Humans
(1.344)
Animals
(683)
Male
(678)
Physical Sciences
(670)
Female
(651)
Technology
(555)
Middle Aged
(406)
Mice
(387)
Biological And Medical Sciences
(359)
Adult
(352)
Physics
(337)
Aged
(323)
Engineering
(319)
Science & Technology - Other Topics
(290)
Medical Sciences
(262)
Biochemistry & Molecular Biology
(260)
Oncology
(259)
Engineering, Electrical & Electronic
(250)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Blood
(69)
Cancer Research
(64)
Journal Of Clinical Oncology
(62)
Nature
(59)
Journal Of Medicinal Chemistry
(56)
Proceedings Of The National Academy Of Sciences - Pnas
(56)
Ieee Transactions On Electron Devices
(53)
Nature Communications
(51)
Plos One
(47)
Science
(39)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(18)
... seit 90 Tagen
(61)

Menü

Weitere Dienste

Einstellungen

GaN-on-Si Power Technology: Devices and Applications

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride

GaN power IC technology on p -GaN gate HEMT platform

Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal--Insulator--Semiconductor High-Electron Mobility Transistors

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Effectiveness of controlling COVID-19 epidemic by implementing soft lockdown policy and extensive community screening in Taiwan

Influence of AlN Passivation on Dynamic ON-Resistance and Electric Field Distribution in High-Voltage AlGaN/GaN-on-Si HEMTs

A Stub Tapped Branch-Line Coupler for Dual-Band Operations

AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique

Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

Approaching precision public health by automated syndromic surveillance in communities

Trapping mechanisms in insulated‐gate GaN power devices: Understanding and characterization techniques

Evaluating the Effectiveness of School Closure in COVID-19-Related Syndromes From Community-Based Syndromic Surveillance: Longitudinal Observational Study

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion

Aktive Filter

Suchergebnisse filtern