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Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

IEEE electron device letters, 2009-02, Vol.30 (2), p.133-135

2009

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IEEE_Xplore

RF/wireless interconnect for inter- and intra-chip communications

Proceedings of the IEEE, 2001-04, Vol.89 (4), p.456-466

2001

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IEEE_Xplore

Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

IEEE electron device letters, 2008-03, Vol.29 (3), p.215-217

2008

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IEEE_Xplore

Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT

IEEE electron device letters, 2009-08, Vol.30 (8), p.861-863

2009

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IEEE_Xplore

A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

IEEE journal of solid-state circuits, 2003-06, Vol.38 (6), p.1028-1032

2003

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IEEE_Xplore

A study on the effects of vibrations on the surface finish using a surface topography simulation model for turning

International journal of machine tools & manufacture, 1998-07, Vol.38 (7), p.763-782

1998

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A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

IEEE journal of solid-state circuits, 2000-09, Vol.35 (9), p.1338-1344

2000

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IEEE_Xplore

CMP network-on-chip overlaid with multi-band RF-interconnect

2008 IEEE 14th International Symposium on High Performance Computer Architecture, 2008, p.191-202

2008

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IEEE_Xplore

Guest Editors' Introduction: Urban Computing--Navigating Space and Context

Computer (Long Beach, Calif.), 2006-09, Vol.39 (9), p.36-37

2006

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IEEE_Xplore

Millimeter-wave silicon MMIC interconnect and coupler using multilayer polyimide technology

IEEE transactions on microwave theory and techniques, 2000-09, Vol.48 (9), p.1482-1487

2000

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IEEE_Xplore

Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices]

IEEE electron device letters, 2000-08, Vol.21 (8), p.373-375

2000

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IEEE_Xplore

A novel low-loss low-crosstalk interconnect for broad-band mixed-signal silicon MMICs

IEEE transactions on microwave theory and techniques, 1999-09, Vol.47 (9), p.1830-1835

1999

Link zum Volltext
IEEE_Xplore

Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode

IEEE electron device letters, 2000-11, Vol.21 (11), p.528-530

2000

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IEEE_Xplore

The laser ablation threshold of YBa2Cu3O6+x as revealed by using projection optics

Applied surface science, 1995-02, Vol.86 (1-4), p.13-17

1995

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Novel considerations of functions of helium and nitrogen in a fast flow CO2 laser

Optics and laser technology, 1998-09, Vol.30 (6-7), p.437-441

1998

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O.008 Cytoplasm-localized large hepatitis delta antigen interferes clathrin-mediated protein trafficking

Journal of clinical virology, 2006, Vol.36, p.S2-S3

2006

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Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

IEEE transactions on electron devices, 1987-12, Vol.34 (12), p.2571-2579

1987

Link zum Volltext
IEEE_Xplore

Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1728-1732

2009

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Flat band voltage control on low V t metal-gate/high- κ CMOSFETs with small EOT (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1728-1732

2009

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Localized lifetime control in insulated-gate transistors by proton implantation

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1667-1671

1986

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IEEE_Xplore

1/f noise of AlGaAs-GaAs HBTs controlled by biasing an on-ledge Schottky diode

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.211-213

2000

Link zum Volltext
IEEE_Xplore

On-chip high-Q (>3000) transformer-type spiral inductors

Electronics letters, 2002-01, Vol.38 (3), p.112-113

2002

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Semiconductor technology considerations in high speed data conversion

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004, 2004, p.31-34

Chang, M.F.

2004

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IEEE_Xplore

1.1 Gbit∕s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

Electronics letters, 2002-01, Vol.38 (2), p.71-72

2002

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Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

Applied physics letters, 2005-04, Vol.86 (14), p.143508-143508-3

2005

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Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

RF/wireless interconnect for inter- and intra-chip communications

Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT

A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

A study on the effects of vibrations on the surface finish using a surface topography simulation model for turning

A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

CMP network-on-chip overlaid with multi-band RF-interconnect

Guest Editors' Introduction: Urban Computing--Navigating Space and Context

Millimeter-wave silicon MMIC interconnect and coupler using multilayer polyimide technology

Modulating HBT's current gain by using externally biased on-ledge Schottky diode [GaAs devices]

A novel low-loss low-crosstalk interconnect for broad-band mixed-signal silicon MMICs

Source identification and control of 1/f noise in AlGaAs/GaAs HBTs by using an on-ledge Schottky diode

The laser ablation threshold of YBa2Cu3O6+x as revealed by using projection optics

Novel considerations of functions of helium and nitrogen in a fast flow CO2 laser

O.008 Cytoplasm-localized large hepatitis delta antigen interferes clathrin-mediated protein trafficking

Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)

Flat band voltage control on low V t metal-gate/high- κ CMOSFETs with small EOT (Invited Paper)

Localized lifetime control in insulated-gate transistors by proton implantation

1/f noise of AlGaAs-GaAs HBTs controlled by biasing an on-ledge Schottky diode

On-chip high-Q (>3000) transformer-type spiral inductors

Semiconductor technology considerations in high speed data conversion

1.1 Gbit∕s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

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