UB Paderborn / Katalog / Suche / in CDI

Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

Physical review letters, 2004-12, Vol.93 (23), p.237005.1-237005.4, Article 237005

2004

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Metal-insulator transition and superconductivity in boron-doped diamond

Physical review. B, Condensed matter and materials physics, 2007-04, Vol.75 (16), p.165313, Article 165313

2007

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Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

Journal of applied physics, 2015-08, Vol.118 (5)

2015

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Diamond processing by focused ion beam-surface damage and recovery

Applied physics letters, 2011-10, Vol.99 (18), p.183109-183109-3

2011

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Damage threshold for ion-beam induced graphitization of diamond

Applied physics letters, 1995-08, Vol.67 (9), p.1194-1196

1995

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Is sulfur a donor in diamond?

Applied physics letters, 2000-02, Vol.76 (6), p.757-759

2000

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The use of SIMS in quality control and failure analysis of electrodeposited items inspected for hydrogen effects

Corrosion science, 2008-05, Vol.50 (5), p.1481-1491

2008

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The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

Diamond and related materials, 2007-08, Vol.16 (8), p.1459-1462

2007

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Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Journal of applied physics, 2004-12, Vol.96 (12), p.7060-7065

2004

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Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

Journal of applied physics, 2015-08, Vol.118 (5)

2015

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Superconductivity in boron-doped homoepitaxial (001)-oriented diamond layers

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (11), p.2160-2165

2005

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Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond

Applied physics letters, 2001-08, Vol.79 (8), p.1115-1117

2001

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Diffusion of hydrogen in undoped, p-type and n-type doped diamonds

Diamond and related materials, 2003-03, Vol.12 (3), p.623-631

2003

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n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers

Diamond and related materials, 2004-04, Vol.13 (4), p.700-704

2004

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Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

Diamond and related materials, 2001-03, Vol.10 (3), p.453-458

2001

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Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

Solid-state electronics, 2002-06, Vol.46 (6), p.785-789

2002

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Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Nature materials, 2003-07, Vol.2 (7), p.482-486

2003

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Optical Conductivity Studies in Heavily Boron-Doped Diamond

Physica status solidi. A, Applied research, 2001-08, Vol.186 (2), p.303-307

2001

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A comparison between heavy silicon and tellurium doping of InP during metalorganic molecular beam epitaxy

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.476-478

2005

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IEEE_Xplore

Formation of carbon nitride films by high-energy nitrogen ion implantation into glassy carbon

Surface & coatings technology, 1994-12, Vol.68, p.616-620

1994

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Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Physica status solidi. A, Applied research, 2001-08, Vol.186 (2), p.281-289

2001

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Beryllium doped InP/InGaAsP heterojunction bipolar transistors

Solid-state electronics, 1998-11, Vol.42 (11), p.2039-2045

1998

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Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defects

Diamond and related materials, 2002-03, Vol.11 (3-6), p.316-322

2002

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Diffusion of Lithium in Diamond

Physica status solidi. A, Applied research, 2002-10, Vol.193 (3), p.508-516

2002

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Co silicide formation on epitaxial Si1−yCy/Si (001) layers

Journal of applied physics, 2000-04, Vol.87 (7), p.3306-3312

2000

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Einstellungen

Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

Metal-insulator transition and superconductivity in boron-doped diamond

Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

Diamond processing by focused ion beam-surface damage and recovery

Damage threshold for ion-beam induced graphitization of diamond

Is sulfur a donor in diamond?

The use of SIMS in quality control and failure analysis of electrodeposited items inspected for hydrogen effects

The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

Superconductivity in boron-doped homoepitaxial (001)-oriented diamond layers

Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond

Diffusion of hydrogen in undoped, p-type and n-type doped diamonds

n-type diamond with high room temperature electrical conductivity by deuteration of boron doped diamond layers

Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptors

Tunnel diode collector contact in InP based PNP heterojunction bipolar transistors

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Optical Conductivity Studies in Heavily Boron-Doped Diamond

A comparison between heavy silicon and tellurium doping of InP during metalorganic molecular beam epitaxy

Formation of carbon nitride films by high-energy nitrogen ion implantation into glassy carbon

Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects

Beryllium doped InP/InGaAsP heterojunction bipolar transistors

Diffusion of hydrogen from a microwave plasma into diamond and its interaction with dopants and defects

Diffusion of Lithium in Diamond

Co silicide formation on epitaxial Si1−yCy/Si (001) layers

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