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Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2001-07, Vol.467, p.557-560

2001

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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

2006 7th Annual Non-Volatile Memory Technology Symposium, 2006, p.49-51

2006

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Low-shear modeled microgravity affects metabolic networks of Escherichia coli O157:H7 EDL933: Further insights into space-microbiology consequences

Food research international, 2022-04, Vol.154, p.111013-111013, Article 111013

2022

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

Spin reorientation transition in Fe-rich alloy films on W(110): The role of magnetoelastic anisotropy and structural transition

Electronic and magnetic properties in Fe-based Fe1-xNix, Fe1-xCox, and Fe1-xVx films on W(110)

Improvement of resistive memory switching in NiO using IrO2

Key factors to enhance the switching characteristics in submicron MRAM cells

Improved magnetic tunnel junction with amorphous seed layer, surface treatment,and high-polarization magnetic materials

Spin reorientation transition in Fe(110) thin films: The role of surface anisotropy

Low power operating bipolar TMO ReRAM for sub 10 nm era

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

Investigation on Resistive Memory Switching Mechanism of NiO

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Effect of Ni Concentration on Quantum-well States of the Alloy System Ag/Fe1-xNix: A Spin- and angle-Resolved Photoemission Study

Hydrogenolysis of cellulose into polyols over Ni/W/SiO2 catalysts

Electronic and magnetic properties in Fe-based Fe 1− x Ni x , Fe 1− x Co x , and Fe 1− x V x films on W(1 1 0)

Improvement of resistive memory switching in NiO using Ir O 2

Shear flows of liquid crystal polymers: measurements of the second normal stress difference and the Doi molecular theory

Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

Performance of a quadruple reflector circular polarizer in VUV region for angle- and spin-resolved photoemission spectroscopy

Normal stress differences in liquid crystalline hydroxypropylcellulose solutions

Effect of Ni concentration on quantum-well states of the alloy system Ag ∕ Fe 1 − x Ni x : A spin- and angle-resolved photoemission study

Micro-spot high resolution beamline of PLS: outside order SGM with moving entrance slit

Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

Low-shear modeled microgravity affects metabolic networks of Escherichia coli O157:H7 EDL933: Further insights into space-microbiology consequences

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