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1.0 THz GaN IMPATT Source: Effect of Parasitic Series Resistance

Journal of infrared, millimeter and terahertz waves, 2018-10, Vol.39 (10), p.954-974

2018

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Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (18), p.n/a

Acharyya, Aritra

2019

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1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Physica status solidi. A, Applications and materials science, 2019-04, Vol.216 (7), p.n/a

Acharyya, Aritra

2019

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Impact Ionization Rate of Electrons in Bilayer Graphene Nanoribbons

Journal of electronic materials, 2019-11, Vol.48 (11), p.7169-7176

Acharyya, Aritra

2019

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Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

Applied physics. A, Materials science & processing, 2017-10, Vol.123 (10), p.1-12, Article 629

Acharyya, Aritra

2017

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Photonics, 2023-07, Vol.10 (7), p.800

2023

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Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

International journal of numerical modelling, 2020-11, Vol.33 (6), p.n/a

Acharyya, Aritra

2020

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Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Journal of semiconductors, 2013-02, Vol.34 (2), p.19-30

2013

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Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Journal of semiconductors, 2018-07, Vol.39 (7), p.72002

Acharyya, Aritra

2018

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Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

Journal of semiconductors, 2014-03, Vol.35 (3), p.39-49

2014

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Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Journal of semiconductors, 2014-08, Vol.35 (8), p.69-78

2014

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Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes

Journal of computational electronics, 2016-12, Vol.15 (4), p.1370-1387

2016

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Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors

Journal of computational electronics, 2017-09, Vol.16 (3), p.503-513

2017

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Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

Journal of semiconductors, 2020-03, Vol.41 (3), p.32103

2020

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Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors

Journal of computational electronics, 2015-03, Vol.14 (1), p.309-320

2015

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Effect of magnetic field on the RF performance of millimeter-wave IMPATT source

Journal of computational electronics, 2016-03, Vol.15 (1), p.210-221

2016

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A generalized analytical model based on multistage scattering phenomena for estimating the impact ionization rate of charge carriers in semiconductors

Journal of computational electronics, 2014-12, Vol.13 (4), p.917-924

2014

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Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale p-n junction based on Si/Si0.4Ge0.6/Si quantum well

Journal of computational electronics, 2015-03, Vol.14 (1), p.180-191

2015

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Influence of skin effect on the series resistance of millimeter-wave IMPATT devices

Journal of computational electronics, 2013-09, Vol.12 (3), p.511-525

2013

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Quantum drift-diffusion model for IMPATT devices

Journal of computational electronics, 2014-09, Vol.13 (3), p.739-752

2014

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Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Journal of computational electronics, 2016-06, Vol.15 (2), p.646-656

2016

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Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors

Journal of computational electronics, 2016-03, Vol.15 (1), p.34-39

2016

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Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs

Journal of computational electronics, 2014-06, Vol.13 (2), p.408-424

2014

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Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

Journal of computational electronics, 2014-09, Vol.13 (3), p.769-777

2014

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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

Journal of semiconductors, 2013-10, Vol.34 (10), p.104003-1-104003-8

2013

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1.0 THz GaN IMPATT Source: Effect of Parasitic Series Resistance

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Impact Ionization Rate of Electrons in Bilayer Graphene Nanoribbons

Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes

Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors

Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes

Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors

Effect of magnetic field on the RF performance of millimeter-wave IMPATT source

A generalized analytical model based on multistage scattering phenomena for estimating the impact ionization rate of charge carriers in semiconductors

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale p-n junction based on Si/Si0.4Ge0.6/Si quantum well

Influence of skin effect on the series resistance of millimeter-wave IMPATT devices

Quantum drift-diffusion model for IMPATT devices

Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors

Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

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