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Terahertz radiation from silicon carbide charge plasma avalanche transit time source

Sadhana (Bangalore), 2021-12, Vol.46 (4), Article 218

Acharyya, Aritra

2021

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New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies

1, 2022

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Advanced Materials for Future Terahertz Devices, Circuits and Systems

1, 2021

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Foundations and Frontiers in Computer, Communication and Electrical Engineering: Proceedings of the 3rd International Conference C2E2, Mankundu, West Bengal, India, 15th-16th January, 2016

Acharyya, Aritra

1, 2016

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Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing

1st ed. 2021., 2021

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response

Nanoscience &Nanotechnology-Asia, 2019, Vol.9 (2), p.172-184

2019

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part II: Excess Noise Characteristics

Nanoscience &Nanotechnology-Asia, 2019, Vol.9 (2), p.185-191

2019

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1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Physica status solidi. A, Applications and materials science, 2019-04, Vol.216 (7), p.n/a

Acharyya, Aritra

2019

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Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Nanoscience &Nanotechnology-Asia, 2019, Vol.9 (2), p.192-197

2019

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Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-Matter Interactions

1st ed. 2020., 2020

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Impact Ionization Rate of Electrons in Bilayer Graphene Nanoribbons

Journal of electronic materials, 2019-11, Vol.48 (11), p.7169-7176

Acharyya, Aritra

2019

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Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices

IEEE access, 2024, Vol.12, p.123656-123677

2024

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Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

IEEE access, 2024, Vol.12, p.16022-16038

2024

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Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

Applied physics. A, Materials science & processing, 2017-10, Vol.123 (10), p.1-12, Article 629

Acharyya, Aritra

2017

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Photonics, 2023-07, Vol.10 (7), p.800

2023

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Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

Nanoscience & Nanotechnology-Asia, 2020, Vol.10 (4), p.501-506

2020

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Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (10), p.873

2024

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Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

International journal of numerical modelling, 2020-11, Vol.33 (6), p.n/a

Acharyya, Aritra

2020

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Thermal Analysis and Experimentation of an IoT-based Video Surveillance Module

IETE journal of education, 2022-01, Vol.63 (1), p.14-24

Acharyya, Aritra

2022

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A 360° Video Surveillance Module for Forest Railway Tracks

IETE journal of education, 2021-07, Vol.62 (2), p.95-104

Acharyya, Aritra

2021

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Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Journal of semiconductors, 2013-02, Vol.34 (2), p.19-30

2013

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Design and Realization of a Low-Cost Smart Walking Aid for Visually Impaired and Blind People

Qeios, 2023-10

2023

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Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Journal of semiconductors, 2018-07, Vol.39 (7), p.72002

Acharyya, Aritra

2018

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Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

Journal of semiconductors, 2014-03, Vol.35 (3), p.39-49

2014

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The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

Advances in OptoElectronics (Hindawi), 2013-01, Vol.2013 (2013), p.1-12

2013

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Terahertz radiation from silicon carbide charge plasma avalanche transit time source

New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies

Advanced Materials for Future Terahertz Devices, Circuits and Systems

Foundations and Frontiers in Computer, Communication and Electrical Engineering: Proceedings of the 3rd International Conference C2E2, Mankundu, West Bengal, India, 15th-16th January, 2016

Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part II: Excess Noise Characteristics

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-Matter Interactions

Impact Ionization Rate of Electrons in Bilayer Graphene Nanoribbons

Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Diminution of impact ionization rate of charge carriers in semiconductors due to acoustic phonon scattering

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Thermal Analysis and Experimentation of an IoT-based Video Surveillance Module

A 360° Video Surveillance Module for Forest Railway Tracks

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Design and Realization of a Low-Cost Smart Walking Aid for Visually Impaired and Blind People

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

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