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New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies

1, 2022

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Generation, Detection and Processing of Terahertz Signals

1st ed. 2022., 2021

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Advanced Materials for Future Terahertz Devices, Circuits and Systems

1, 2021

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Foundations and Frontiers in Computer, Communication and Electrical Engineering: Proceedings of the 3rd International Conference C2E2, Mankundu, West Bengal, India, 15th-16th January, 2016

Acharyya, Aritra

1, 2016

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Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing

1st ed. 2021., 2021

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Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Physica status solidi. A, Applications and materials science, 2019-09, Vol.216 (18), p.n/a

Acharyya, Aritra

2019

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1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Physica status solidi. A, Applications and materials science, 2019-04, Vol.216 (7), p.n/a

Acharyya, Aritra

2019

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Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-Matter Interactions

1st ed. 2020., 2020

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Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

IEEE access, 2024-01, Vol.12, p.1-1

2024

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Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Photonics, 2023-07, Vol.10 (7), p.800

2023

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Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

International journal of numerical modelling, 2020-11, Vol.33 (6), p.n/a

Acharyya, Aritra

2020

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Thermal Analysis and Experimentation of an IoT-based Video Surveillance Module

IETE journal of education, 2022-01, Vol.63 (1), p.14-24

Acharyya, Aritra

2022

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A 360° Video Surveillance Module for Forest Railway Tracks

IETE journal of education, 2021-07, Vol.62 (2), p.95-104

Acharyya, Aritra

2021

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Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Journal of semiconductors, 2013-02, Vol.34 (2), p.19-30

2013

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Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Journal of semiconductors, 2018-07, Vol.39 (7), p.72002

Acharyya, Aritra

2018

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Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

Journal of semiconductors, 2014-03, Vol.35 (3), p.39-49

2014

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Dark current reduction in nano-avalanche photodiodes by incorporating multiple quantum barriers

International journal of electronics, 2017-12, Vol.104 (12), p.1957-1973

2017

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The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

Advances in OptoElectronics (Hindawi), 2013-01, Vol.2013, p.1-12

2013

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Foundations and frontiers in computer, communication and electrical engineering: proceedings of 3rd International Conference on Foundations and Frontiers in Computer, Communication and Electrical Engineering, Mankundu, West Bengal, India, 15th-16th January, 2015

Acharyya, Aritra

2016

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Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

Active and passive electronic components, 2013, Vol.2013, p.1-7

2013

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60 GHz Source for WLAN Applications Based on IEEE 802.11ad Protocol Standards

IETE journal of education, 2019-10, Vol.60 (2), p.82-90

2019

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Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Journal of semiconductors, 2014-08, Vol.35 (8), p.69-78

2014

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Cost-Effective Aluminium-Coated Hot-Melt Adhesive Based Parabolic Reflector for Enhanced Long-Range Sound Capture

IETE journal of education, 2023-12, p.1-9

2023

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Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Applied nanoscience, 2014, Vol.4 (1), p.1-14

2014

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Effect of Self-Heating on Terahertz Double Avalanche Region Transit Time Source

IETE journal of education, 2020-01, Vol.61 (1), p.16-24

2020

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New Horizons in Millimeter-Wave, Infrared and Terahertz Technologies

Generation, Detection and Processing of Terahertz Signals

Advanced Materials for Future Terahertz Devices, Circuits and Systems

Foundations and Frontiers in Computer, Communication and Electrical Engineering: Proceedings of the 3rd International Conference C2E2, Mankundu, West Bengal, India, 15th-16th January, 2016

Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

1.0–10.0 THz Radiation from Graphene Nanoribbon Based Avalanche Transit Time Sources

Emerging Trends in Terahertz Solid-State Physics and Devices: Sources, Detectors, Advanced Materials, and Light-Matter Interactions

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

Terahertz wave radiation from mutually injection locked multi‐element graphene nanoribbon avalanche transit time sources

Thermal Analysis and Experimentation of an IoT-based Video Surveillance Module

A 360° Video Surveillance Module for Forest Railway Tracks

Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device

Hot electron transport in wurtzite-GaN: effects of temperature and doping concentration

Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

Dark current reduction in nano-avalanche photodiodes by incorporating multiple quantum barriers

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of p+-p-n-n+ Wz-GaN Reach-Through Avalanche Photodiodes

Foundations and frontiers in computer, communication and electrical engineering: proceedings of 3rd International Conference on Foundations and Frontiers in Computer, Communication and Electrical Engineering, Mankundu, West Bengal, India, 15th-16th January, 2015

Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

60 GHz Source for WLAN Applications Based on IEEE 802.11ad Protocol Standards

Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter-wave and terahertz frequencies

Cost-Effective Aluminium-Coated Hot-Melt Adhesive Based Parabolic Reflector for Enhanced Long-Range Sound Capture

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Effect of Self-Heating on Terahertz Double Avalanche Region Transit Time Source

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