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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375

2020

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The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

IEEE transactions on industrial electronics (1982), 2015-01, Vol.62 (1), p.163-171

2015

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An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

IEEE transactions on power electronics, 2015-05, Vol.30 (5), p.2383-2394

2015

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A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Energies (Basel), 2023-05, Vol.16 (11), p.4380

2023

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Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Energies (Basel), 2021-10, Vol.14 (20), p.6834

2021

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Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

IEEE transactions on power electronics, 2015-06, Vol.30 (6), p.3345-3355

2015

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Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.188-202

2022

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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2278-2286

2014

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Temperature and dI sub(D)SdtDependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Materials science forum, 2014-02, Vol.778-780, p.816-819

2014

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Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, 2021, p.1-6

2021

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Cryogenic Characterization of Commercial SiC Power MOSFETs

Materials science forum, 2015-06, Vol.821-823, p.777-780

2015

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On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021, p.384-388

2021

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Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015, p.1-8

2015

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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015, p.2239-2246

2015

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Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.544-563

2023

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Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

IEEE transactions on industry applications, 2019-07, Vol.55 (4), p.3967-3977

2019

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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Energies (Basel), 2021-01, Vol.14 (1), p.82

2021

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Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.951-957

2021

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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Temperature and dI sub(D)SdtDependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Cryogenic Characterization of Commercial SiC Power MOSFETs

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation

Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

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