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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375

2020

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The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

IEEE transactions on industrial electronics (1982), 2015-01, Vol.62 (1), p.163-171

2015

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An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

IEEE transactions on power electronics, 2015-05, Vol.30 (5), p.2383-2394

2015

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Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench & Asymmetrical Trench SiC MOSFETs

IEEE open journal of power electronics, 2023, Vol.4, p.1-13

2023

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Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

IEEE transactions on power electronics, 2015-12, Vol.30 (12), p.6978-6992

2015

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Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

IEEE transactions on power electronics, 2015-06, Vol.30 (6), p.3345-3355

2015

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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of power electronics, 2021, Vol.2, p.265-276

2021

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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

IEEE transactions on industrial electronics (1982), 2016-02, Vol.63 (2), p.849-863

2016

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Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.188-202

2022

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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2278-2286

2014

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An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

IEEE journal of emerging and selected topics in power electronics, 2014-09, Vol.2 (3), p.517-528

2014

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Volltext

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

IEEE transactions on power electronics, 2023-09, Vol.38 (9), p.10933-10946

2023

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Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, 2021, p.1-6

2021

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Cryogenic Characterization of Commercial SiC Power MOSFETs

Materials science forum, 2015-06, Vol.821-823, p.777-780

2015

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On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021, p.384-388

2021

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Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

2022 IEEE Energy Conversion Congress and Exposition (ECCE), 2022, p.1-7

2022

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Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), 2022, p.1-6

2022

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Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions

2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), 2021, p.1-9

2021

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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015, p.2239-2246

2015

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Volltext

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.544-563

2023

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Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

IEEE transactions on industry applications, 2019-07, Vol.55 (4), p.3967-3977

2019

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Intelligent Gate Drivers for Future Power Converters

IEEE transactions on power electronics, 2022-03, Vol.37 (3), p.3484-3503

2022

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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench & Asymmetrical Trench SiC MOSFETs

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Cryogenic Characterization of Commercial SiC Power MOSFETs

On the Repeatability and Reliability of Threshold Voltage Measurements during Gate Bias Stresses in Wide Bandgap Power Devices

Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs

Positive and Negative Bias Temperature Instability on Crosstalk-Stressed Symmetrical & Asymmetrical Double-Trench SiC MOSFETs

Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules

Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Analysis of 1st & 3rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS

Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions

Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

Intelligent Gate Drivers for Future Power Converters

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