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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375

2020

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The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

IEEE transactions on industrial electronics (1982), 2015-01, Vol.62 (1), p.163-171

2015

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The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

IEEE transactions on industrial electronics (1982), 2020-06, Vol.67 (6), p.4556-4566

2020

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An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

IEEE transactions on power electronics, 2015-05, Vol.30 (5), p.2383-2394

2015

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A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Energies (Basel), 2023-05, Vol.16 (11), p.4380

2023

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Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench & Asymmetrical Trench SiC MOSFETs

IEEE open journal of power electronics, 2023, Vol.4, p.1-13

2023

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Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Energies (Basel), 2021-10, Vol.14 (20), p.6834

2021

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Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

IEEE transactions on power electronics, 2015-12, Vol.30 (12), p.6978-6992

2015

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Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

IEEE transactions on power electronics, 2015-06, Vol.30 (6), p.3345-3355

2015

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Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

IEEE open journal of power electronics, 2021, Vol.2, p.145-154

2021

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Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of power electronics, 2021, Vol.2, p.265-276

2021

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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

IEEE transactions on industrial electronics (1982), 2016-02, Vol.63 (2), p.849-863

2016

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Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.188-202

2022

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Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

IEEE open journal of the Industrial Electronics Society, 2022, Vol.3, p.65-80

2022

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Electrothermal power cycling of 15 kV SiC PiN diodes

Microelectronics and reliability, 2024-02, Vol.153, p.115310, Article 115310

2024

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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2278-2286

2014

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Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

IEEE transactions on industrial electronics (1982), 2015-03, Vol.62 (3), p.1461-1470

2015

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Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC

Microelectronics and reliability, 2021-10, Vol.125, p.114362, Article 114362

2021

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Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures

Microelectronics and reliability, 2022-11, Vol.138, p.114711, Article 114711

2022

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Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

Microelectronics and reliability, 2020-11, Vol.114, p.113752, Article 113752

2020

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An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

IEEE journal of emerging and selected topics in power electronics, 2014-09, Vol.2 (3), p.517-528

2014

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Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

IEEE transactions on power electronics, 2023-09, Vol.38 (9), p.10933-10946

2023

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Volltext

FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

Microelectronics and reliability, 2022-11, Vol.138, p.114686, Article 114686

2022

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Temperature and dI sub(D)SdtDependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Materials science forum, 2014-02, Vol.778-780, p.816-819

2014

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Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Materials science forum, 2014-02, Vol.778-780, p.816-819

2014

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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench & Asymmetrical Trench SiC MOSFETs

Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature

Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters

Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Electrothermal power cycling of 15 kV SiC PiN diodes

Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery

Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC

Unclamped inductive stressing of GaN and SiC Cascode power devices to failure at elevated temperatures

Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents

An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

FEM-based analysis of avalanche ruggedness of high voltage SiC Merged-PiN-Schottky and Junction-Barrier-Schottky diodes

Temperature and dI sub(D)SdtDependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Temperature and dIDS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

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