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Diffusion dynamics controlled colloidal synthesis of highly monodisperse InAs nanocrystals

Nature communications, 2021-05, Vol.12 (1), p.3013-3013, Article 3013

2021

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Sequential Co‐Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near‐Infrared Photodetectors

Advanced materials (Weinheim), 2023-07, Vol.35 (28), p.e2301842-n/a

2023

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Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

Advanced materials (Weinheim), 2020-10, Vol.32 (40), p.e2004120-n/a

2020

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InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

Journal of crystal growth, 2020-02, Vol.531, p.125342, Article 125342

2020

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Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon

Applied physics letters, 2021-11, Vol.119 (19)

2021

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Phonon frequencies, mechanical and optoelectronic properties for InPxAsySb1-x-y/InAs alloys under the influence of pressure

Applied physics. A, Materials science & processing, 2021-06, Vol.127 (6)

2021

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Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

Journal of crystal growth, 2021-03, Vol.557, p.126010, Article 126010

2021

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Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

ACS nano, 2020-03, Vol.14 (3), p.3519-3527

2020

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Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy

Journal of crystal growth, 2019-03, Vol.509, p.133-140

2019

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Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Journal of crystal growth, 2019-01, Vol.506, p.45-54

2019

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Optimization design for high-quality factor 1.3 μm InAs/InGaAs quantum dot square microcavity lasers on silicon with output waveguide structures

Applied physics. A, Materials science & processing, 2019-08, Vol.125 (8), p.1-9, Article 578

2019

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Regulating the bipolar response of InAs nanowire photodetector and waveguide integration

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Proceedings of the National Academy of Sciences - PNAS, 2023-10, Vol.120 (41), p.e2305327120-e2305327120

2023

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Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots

Nature communications, 2024-03, Vol.15 (1), p.2724-2724

2024

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Photocurrents in a Single InAs Nanowire/Silicon Heterojunction

ACS nano, 2015-10, Vol.9 (10), p.9849-9858

2015

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Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays

Nano letters, 2014-10, Vol.14 (10), p.5650-5655

2014

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Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots

Journal of applied physics, 2018-10, Vol.124 (14)

2018

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Response of mechanical and optoelectronic properties for InPxAsySb1–x–y/InAs system to composition

Journal of the Korean Physical Society, 2022, 81(4), , pp.291-297

2022

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Chemically and electronically active metal ions on InAs quantum dots for infrared detectors

NPG Asia materials, 2023-05, Vol.15 (1), p.30-10, Article 30

2023

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Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors

Journal of electronic materials, 2022-12, Vol.51 (12), p.6835-6845

2022

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Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3775-3782

2022

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Multi-mode Interference Reflector based InAs-QD Laser

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach

IEEE transactions on nanotechnology, 2022, Vol.21, p.489-498

2022

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Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Journal of nanomaterials, 2022, Vol.2022, p.1-9

2022

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Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (15), p.2704

2022

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Diffusion dynamics controlled colloidal synthesis of highly monodisperse InAs nanocrystals

Sequential Co‐Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near‐Infrared Photodetectors

Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon

Phonon frequencies, mechanical and optoelectronic properties for InPxAsySb1-x-y/InAs alloys under the influence of pressure

Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxy

Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD

Optimization design for high-quality factor 1.3 μm InAs/InGaAs quantum dot square microcavity lasers on silicon with output waveguide structures

Regulating the bipolar response of InAs nanowire photodetector and waveguide integration

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots

Photocurrents in a Single InAs Nanowire/Silicon Heterojunction

Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays

Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots

Response of mechanical and optoelectronic properties for InPxAsySb1–x–y/InAs system to composition

Chemically and electronically active metal ions on InAs quantum dots for infrared detectors

Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors

Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing

Multi-mode Interference Reflector based InAs-QD Laser

Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach

Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

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