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The Past, the Present, and the Future of Ferroelectric Memories

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-10

2020

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Ferroelectric field-effect transistors based on HfO2: a review

Nanotechnology, 2021-12, Vol.32 (50)

2021

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Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

Advanced materials (Weinheim), 2021-04, Vol.33 (13), p.e2005098-n/a

2021

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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3769-3774

2018

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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5130-5136

2018

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The First 2D Homochiral Lead Iodide Perovskite Ferroelectrics: [R- and S-1-(4-Chlorophenyl)ethylammonium] 2 PbI 4

Advanced materials (Weinheim), 2019-04, Vol.31 (16), p.e1808088

2019

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Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Advanced functional materials, 2022-12, Vol.32 (49), p.n/a

2022

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Ferroelectrics: Skyrmions all round

Nature physics, 2015-11, Vol.11 (11), p.891

Fleet, Luke

2015

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Organic enantiomeric high-Tc ferroelectrics

Proceedings of the National Academy of Sciences - PNAS, 2019-03, Vol.116 (13), p.5878-5885

2019

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Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

Advanced materials (Weinheim), 2020-02, Vol.32 (7), p.e1905764-n/a

2020

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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1591-1598

2019

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Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In 2 Se 3

Advanced functional materials, 2019-05, Vol.29 (20)

2019

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Transparent ferroelectric crystals with ultrahigh piezoelectricity

Nature (London), 2020-01, Vol.577 (7790), p.350-354

2020

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Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

IEEE electron device letters, 2020-12, Vol.41 (12), p.1774-1777

2020

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Spatially resolved steady-state negative capacitance

Nature (London), 2019-01, Vol.565 (7740), p.468-471

2019

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Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Advanced materials (Weinheim), 2022-10, Vol.34 (42), p.e2205825-n/a

2022

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Simultaneously enhanced ferroelectric and magnetic properties in 0.675BiFe^sub 1-x^Cr^sub x^O3-0.325PbTiO3 (x = 0-0.05) ceramics

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2435

2017

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Unveiling the double-well energy landscape in a ferroelectric layer

Nature (London), 2019-01, Vol.565 (7740), p.464-467

2019

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Er-doped Bi^sub 3^Ti(Ta^sub x^Nb^sub 1-x^)O^sub 9^ multifunctional ferroelectrics: up-conversional photoluminescence and ferroelectric properties

Journal of materials science. Materials in electronics, 2017-01, Vol.28 (1), p.501

2017

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Investigation of site selectivity of lanthanum in SrBi^sub 4^Ti^sub 4^O^sub 15^ ceramic by structural, dielectric, ferroelectric and conduction behavior

Journal of materials science. Materials in electronics, 2017-01, Vol.28 (1), p.625

2017

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Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

Advanced functional materials, 2021-04, Vol.31 (17), p.n/a

2021

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Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Advanced materials (Weinheim), 2023-06, Vol.35 (22), p.e2206864-n/a

2023

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Optical, dielectric and ferroelectric properties of KTa^sub 0.63^Nb^sub 0.37^O3 and Cu doped KTa^sub 0.63^Nb^sub 0.37^O3 single crystals

Journal of materials science. Materials in electronics, 2016-12, Vol.27 (12), p.13075

2016

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Inorganic dielectric materials for energy storage applications: a review

Journal of physics. D, Applied physics, 2022-05, Vol.55 (18), p.183002

2022

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High piezoelectricity associated with crossover from nonergodicity to ergodicity in modified Bi^sub 0.5^Na^sub 0.5^TiO3 relaxor ferroelectrics

Journal of electroceramics, 2016-12, Vol.37 (1-4), p.23

2016

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The Past, the Present, and the Future of Ferroelectric Memories

Ferroelectric field-effect transistors based on HfO2: a review

Review on Recent Developments in 2D Ferroelectrics: Theories and Applications

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior

The First 2D Homochiral Lead Iodide Perovskite Ferroelectrics: [R- and S-1-(4-Chlorophenyl)ethylammonium] 2 PbI 4

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Ferroelectrics: Skyrmions all round

Organic enantiomeric high-Tc ferroelectrics

Reproducible Ultrathin Ferroelectric Domain Switching for High‐Performance Neuromorphic Computing

Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In 2 Se 3

Transparent ferroelectric crystals with ultrahigh piezoelectricity

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

Spatially resolved steady-state negative capacitance

Reversibly Controlled Ternary Polar States and Ferroelectric Bias Promoted by Boosting Square‐Tensile‐Strain

Simultaneously enhanced ferroelectric and magnetic properties in 0.675BiFe^sub 1-x^Cr^sub x^O3-0.325PbTiO3 (x = 0-0.05) ceramics

Unveiling the double-well energy landscape in a ferroelectric layer

Er-doped Bi^sub 3^Ti(Ta^sub x^Nb^sub 1-x^)O^sub 9^ multifunctional ferroelectrics: up-conversional photoluminescence and ferroelectric properties

Investigation of site selectivity of lanthanum in SrBi^sub 4^Ti^sub 4^O^sub 15^ ceramic by structural, dielectric, ferroelectric and conduction behavior

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Optical, dielectric and ferroelectric properties of KTa^sub 0.63^Nb^sub 0.37^O3 and Cu doped KTa^sub 0.63^Nb^sub 0.37^O3 single crystals

Inorganic dielectric materials for energy storage applications: a review

High piezoelectricity associated with crossover from nonergodicity to ergodicity in modified Bi^sub 0.5^Na^sub 0.5^TiO3 relaxor ferroelectrics

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