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High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

IEEE electron device letters, 2017-01, Vol.38 (1), p.103-106

2017

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High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

IEEE electron device letters, 2017-04, Vol.38 (4), p.509-512

2017

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GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

Journal of physics. D, Applied physics, 2024-09, Vol.57 (38), p.385102

2024

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A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.8926-8933

2020

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DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

Physica scripta, 2024-07, Vol.99 (7)

2024

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Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Journal of physics. D, Applied physics, 2023-01, Vol.56 (2), p.25105

2023

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Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching

Applied physics express, 2021-12, Vol.14 (12), p.126501

2021

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DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Semiconductor science and technology, 2022-08, Vol.37 (8), p.85008

2022

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Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

Journal of physics. D, Applied physics, 2024-08, Vol.57 (34), p.345101

2024

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Progress of GaN-based E-mode HEMTs

Journal of physics. D, Applied physics, 2024-10, Vol.57 (41), p.413002

2024

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E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

IEEE electron device letters, 2020-04, Vol.41 (4), p.1-1

2020

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4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

Physica status solidi. PSS-RRL. Rapid research letters, 2024-08, Vol.18 (8), p.n/a

2024

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Vertical β-Ga₂O₃ Power Transistors: A Review

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3925-3937

2020

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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3831-3838

2018

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Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1778-1783

2021

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Anisotropic temperature‐dependence of optical phonons in layered PbI2

Journal of Raman spectroscopy, 2018-04, Vol.49 (4), p.775-779

2018

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5.59 W/mm at 30 GHz from E-mode AlN/GaN HEMT using selective etch of in-situ SiN passivation layer

IEEE electron device letters, 2024-08, p.1-1

2024

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A Measurement of the CMB E-mode Angular Power Spectrum at Subdegree Scales from 670 Square Degrees of POLARBEAR Data

The Astrophysical journal, 2020-11, Vol.904 (1), p.65

2020

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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE transactions on power electronics, 2017-08, Vol.32 (8), p.6416-6433

2017

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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002), the Ningbo Science and Technology Innovation Program 2025 (Grant No. 2019B10123), and the National Natural Science Foundation of China (Grant No. 62074122)

Chinese physics B, 2021-08, Vol.30 (8)

2021

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An enhancement-mode AlInN/GaN HEMTs combining intrinsic GaN cap layer and AlGaN back barrier layer

Solid state communications, 2023-06, Vol.366-367, p.115150, Article 115150

2023

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A 28 GHz GaAs front‐end IC with single positive supply voltage

Microwave and optical technology letters, 2021-04, Vol.63 (4), p.1171-1176

2021

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Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.424-428

2023

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Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.460-465

2014

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Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3191-3195

2023

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High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels

A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer

Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching

DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric

Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer

Progress of GaN-based E-mode HEMTs

E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

Vertical β-Ga₂O₃ Power Transistors: A Review

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Anisotropic temperature‐dependence of optical phonons in layered PbI2

5.59 W/mm at 30 GHz from E-mode AlN/GaN HEMT using selective etch of in-situ SiN passivation layer

A Measurement of the CMB E-mode Angular Power Spectrum at Subdegree Scales from 670 Square Degrees of POLARBEAR Data

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

An enhancement-mode AlInN/GaN HEMTs combining intrinsic GaN cap layer and AlGaN back barrier layer

A 28 GHz GaAs front‐end IC with single positive supply voltage

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

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