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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2454-2460

2018

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Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

IEEE electron device letters, 2020-09, Vol.41 (9), p.1284-1287

2020

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A New Complete Condition Monitoring Method for SiC Power MOSFETs

IEEE transactions on industrial electronics (1982), 2021-02, Vol.68 (2), p.1654-1664

2021

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Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4322-4328

2021

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Enabling Accurate and Practical Online Flash Channel Modeling for Modern MLC NAND Flash Memory

IEEE journal on selected areas in communications, 2016-09, Vol.34 (9), p.2294-2311

2016

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Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2347-2354

2021

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Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses

IEEE transactions on power electronics, 2022-02, Vol.37 (2), p.1998-2008

2022

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Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.379-382

2023

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Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs Using Low-Frequency Noise Measurement With Base Bias

IEEE electron device letters, 2023-10, Vol.44 (10), p.1768-1771

2023

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Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1253-1256

2019

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A 510-nW Wake-Up Keyword-Spotting Chip Using Serial-FFT-Based MFCC and Binarized Depthwise Separable CNN in 28-nm CMOS

IEEE journal of solid-state circuits, 2021-01, Vol.56 (1), p.151-164

2021

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Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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MEDAC: A Metastability Condition Detection and Correction Technique for a Near-Threshold-Voltage Multi-Voltage-/Frequency-Domain Network-on-Chip

IEEE journal of solid-state circuits, 2021-07, Vol.56 (7), p.2270-2280

2021

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Relieving the Photosensitivity of Organic Field‐Effect Transistors

Advanced materials (Weinheim), 2020-01, Vol.32 (4), p.e1906122-n/a

2020

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Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5014-5021

2021

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Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 ^\circ C

IEEE transactions on electron devices, 2022-12, p.1-4

2022

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Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.443-446

2021

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Low-Overhead Triple-Node-Upset Self-Recoverable Latch Design for Ultra-Dynamic Voltage Scaling Application

IEEE transactions on circuits and systems. I, Regular papers, 2024-06, Vol.71 (6), p.2632-2645

2024

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Origin of Post-Irradiation Vₜₕ-Shift Variability in 3-D NAND Memory Array

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.405-411

2024

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Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

IEEE electron device letters, 2018-12, Vol.39 (12), p.1948-1951

2018

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Comparative Investigation on Ionizing Irradiation Induced Threshold Voltage Degradation for 1200-V DT SiC MOSFET by Experiment and Simulation

IEEE transactions on nuclear science, 2024-10, p.1-1

2024

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Aging Precursor Identification and Lifetime Estimation for Thermally Aged Discrete Package Silicon Power Switches

IEEE transactions on industry applications, 2017-01, Vol.53 (1), p.251-260

2017

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Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-5

2023

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Energy Calibration of MVT Digitizers in All-Digital Gamma Cameras

IEEE transactions on nuclear science, 2023-05, Vol.70 (5), p.1-1

2023

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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET

A New Complete Condition Monitoring Method for SiC Power MOSFETs

Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs

Enabling Accurate and Practical Online Flash Channel Modeling for Modern MLC NAND Flash Memory

Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit

Bias Temperature Instability of Silicon Carbide Power MOSFET Under AC Gate Stresses

Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C

Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs Using Low-Frequency Noise Measurement With Base Bias

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

A 510-nW Wake-Up Keyword-Spotting Chip Using Serial-FFT-Based MFCC and Binarized Depthwise Separable CNN in 28-nm CMOS

Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

MEDAC: A Metastability Condition Detection and Correction Technique for a Near-Threshold-Voltage Multi-Voltage-/Frequency-Domain Network-on-Chip

Relieving the Photosensitivity of Organic Field‐Effect Transistors

Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs

Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 ^\circ C

Effect of positive bias stress on the back-gate voltage-modulated threshold voltage in double-gate amorphous InGaZnO thin-film transistors

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

Low-Overhead Triple-Node-Upset Self-Recoverable Latch Design for Ultra-Dynamic Voltage Scaling Application

Origin of Post-Irradiation Vₜₕ-Shift Variability in 3-D NAND Memory Array

Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors

Comparative Investigation on Ionizing Irradiation Induced Threshold Voltage Degradation for 1200-V DT SiC MOSFET by Experiment and Simulation

Aging Precursor Identification and Lifetime Estimation for Thermally Aged Discrete Package Silicon Power Switches

Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors

Energy Calibration of MVT Digitizers in All-Digital Gamma Cameras

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