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First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

IEEE electron device letters, 2017-06, Vol.38 (6), p.783-785

2017

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Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1635-1641

2017

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1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4293-4302

2023

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Performance-Improved Vertical Zr/Diamond Schottky Barrier Diode With Lanthanum Hexaboride Interfacial Layer

IEEE electron device letters, 2021-09, Vol.42 (9), p.1366-1369

2021

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Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

IEEE electron device letters, 2020-03, Vol.41 (3), p.329-332

2020

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Surface Pretreatment by Low-Temperature O2 Gas Annealing for Performance Improvement in Pt/β-Ga2O3 Schottky Barrier Diodes

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1464-1468

2024

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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

IEEE electron device letters, 2015-04, Vol.36 (4), p.375-377

2015

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Self-biased (p+)Diamond/(n)4H-SiC vertical Schottky diodes for UV detection

IEEE electron device letters, 2024-09, p.1-1

2024

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Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes

IEEE transactions on power electronics, 2021-01, Vol.36 (1), p.41-44

2021

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Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation

IEEE transactions on nuclear science, 2022-04, Vol.69 (4), p.932-937

2022

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Electrostatic Doping in Semiconductor Devices

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3044-3055

2017

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Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices

IEEE electron device letters, 2022-02, Vol.43 (2), p.319-322

2022

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Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2459-2465

2014

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Defect Identification in β-Ga2O3 Schottky Barrier Diodes With Electron Radiation and Annealing Regulating

IEEE transactions on nuclear science, 2024-05, Vol.71 (5), p.1178-1185

2024

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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1494-1501

2024

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

IEEE electron device letters, 2017-08, Vol.38 (8), p.1097-1100

2017

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Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3212-3222

2021

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Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3609-3613

2024

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

IEEE electron device letters, 2021-07, Vol.42 (7), p.974-977

2021

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12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5736-5741

2021

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Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

IEEE electron device letters, 2017-09, Vol.38 (9), p.1286-1289

2017

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Schottky Barrier Rectifier Based on (100) \beta -Ga2O3 and its DC and AC Characteristics

IEEE electron device letters, 2018-04, Vol.39 (4), p.556-559

2018

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Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

IEEE electron device letters, 2020-12, Vol.41 (12), p.1810-1813

2020

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Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

IEEE electron device letters, 2020-12, Vol.41 (12), p.1758-1761

2020

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First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

Performance-Improved Vertical Zr/Diamond Schottky Barrier Diode With Lanthanum Hexaboride Interfacial Layer

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

Surface Pretreatment by Low-Temperature O2 Gas Annealing for Performance Improvement in Pt/β-Ga2O3 Schottky Barrier Diodes

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Self-biased (p+)Diamond/(n)4H-SiC vertical Schottky diodes for UV detection

Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes

Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation

Electrostatic Doping in Semiconductor Devices

Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices

Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

Defect Identification in β-Ga2O3 Schottky Barrier Diodes With Electron Radiation and Annealing Regulating

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part II

Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Schottky Barrier Rectifier Based on (100) \beta -Ga2O3 and its DC and AC Characteristics

Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

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