UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4397-4403

2021

Volltextzugriff (PDF)

Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices

Chaos, solitons and fractals, 2023-08, Vol.173, p.113633, Article 113633

2023

Volltextzugriff (PDF)

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

Advanced functional materials, 2023-02, Vol.33 (8), p.n/a

2023

Volltextzugriff (PDF)

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

Nanotechnology, 2016-09, Vol.27 (36), p.365204-365204

2016

Volltextzugriff (PDF)

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4029-4036

2015

Volltextzugriff (PDF)

Multilevel programming in Cu/NiO y /NiO x /Pt unipolar resistive switching devices

Nanotechnology, 2016-10, Vol.27 (43), p.435701-435701

2016

Volltextzugriff (PDF)

Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfO x RRAM Devices

IEEE electron device letters, 2013-06, Vol.34 (6), p.750-752

2013

Volltextzugriff (PDF)

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023)

Advanced functional materials, 2023-02, Vol.33 (8), p.n/a

2023

Volltextzugriff (PDF)

Analog and digital resistive switching in W/TiO2/ITO devices: the impact of crystallinity and Indium diffusion

Physica scripta, 2024-09, Vol.99 (10)

2024

Volltextzugriff (PDF)

Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film

Materials science in semiconductor processing, 2024-11, Vol.182, p.108688, Article 108688

2024

Volltextzugriff (PDF)

Custom RISC-V architecture incorporating memristive in-memory computing

International journal of electronics and communications, 2024-12, Vol.187, p.155505, Article 155505

2024

Volltextzugriff (PDF)

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices (Adv. Funct. Mater. 10/2024)

Advanced functional materials, 2024-03, Vol.34 (10), p.n/a

2024

Volltextzugriff (PDF)

Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage

InfoMat, 2020-07, Vol.2 (4), p.743-751

2020

Volltextzugriff (PDF)

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

Advanced electronic materials, 2018-02, Vol.4 (2), p.n/a

2018

Volltextzugriff (PDF)

SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643

2021

Volltextzugriff (PDF)

Advances in resistive switching based memory devices

Journal of physics. D, Applied physics, 2019-10, Vol.52 (43), p.433002

2019

Volltextzugriff (PDF)

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Applied surface science, 2021-09, Vol.560, p.149960, Article 149960

2021

Volltextzugriff (PDF)

Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

IEEE electron device letters, 2016-08, Vol.37 (8), p.994-997

2016

Volltextzugriff (PDF)

Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices-Part I: Experimental Characterization

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4335-4341

2021

Volltextzugriff (PDF)

Chemical vapor deposition synthesis of sp2-BN film on 2-inch Si substrates for bipolar resistive random access memory device

Materials science in semiconductor processing, 2019-11, Vol.103, p.104614, Article 104614

2019

Volltextzugriff (PDF)

Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4637-4643

2024

Volltextzugriff (PDF)

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

IEEE electron device letters, 2021-03, Vol.42 (3), p.335-338

2021

Volltextzugriff (PDF)

Conduction mechanism and impedance analysis of HfOx-based RRAM at different resistive states

Applied surface science, 2022-10, Vol.600, Article 154084

2022

Volltextzugriff (PDF)

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Nanoscale research letters, 2020-01, Vol.15 (1), p.11-11, Article 11

2020

Volltextzugriff (PDF)

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

IEEE electron device letters, 2017-08, Vol.38 (8), p.1019-1022

2017

Volltextzugriff (PDF)

1 – 25 von 2.818

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(1.838)
Mit Volltextzugriff
(2.378)

Publikationsform

3 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(2.814)
Japanisch
(272)
Chinesisch
(4)
Deutsch
(3)
Russisch
(1)
Ukrainisch
(1)

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(2.158)
Technology
(2.021)
Rram
(1.705)
Engineering
(1.478)
Engineering, Electrical & Electronic
(1.458)
Physical Sciences
(1.047)
Physics
(1.010)
Physics, Applied
(876)
Random Access Memory
(851)
Switches
(765)
Resistance
(735)
Materials Science
(577)
Materials Science, Multidisciplinary
(506)
Resistive Random Access Memory
(471)
Science & Technology - Other Topics
(413)
Nanoscience & Nanotechnology
(402)
Switching
(395)
Electrodes
(394)
Computer Science
(385)
Resistive Switching
(366)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays

Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application

3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications

On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying

Multilevel programming in Cu/NiO y /NiO x /Pt unipolar resistive switching devices

Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfO x RRAM Devices

Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023)

Analog and digital resistive switching in W/TiO2/ITO devices: the impact of crystallinity and Indium diffusion

Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film

Custom RISC-V architecture incorporating memristive in-memory computing

Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices (Adv. Funct. Mater. 10/2024)

Lead‐free perovskite MASnBr3‐based memristor for quaternary information storage

Design of CMOS Compatible, High‐Speed, Highly‐Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2/Al2O3/TiOx (HAT) RRAM

SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

Advances in resistive switching based memory devices

Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM

Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices-Part I: Experimental Characterization

Chemical vapor deposition synthesis of sp2-BN film on 2-inch Si substrates for bipolar resistive random access memory device

Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

Conduction mechanism and impedance analysis of HfOx-based RRAM at different resistive states

Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

Suchergebnisse filtern